发明申请
- 专利标题： AlN Crystal and Method of Its Growth
- 专利标题（中）： AlN晶体及其生长方法
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申请号： US12524575申请日： 2008-11-13
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公开(公告)号： US20100242833A1公开(公告)日： 2010-09-30
- 发明人: Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Hideaki Nakahata
- 申请人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Hideaki Nakahata
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2007-313359 20071204
- 国际申请： PCT/JP2008/070648 WO 20081113
- 主分类号： C30B23/02
- IPC分类号： C30B23/02
摘要：
The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (4) having a major face (4m) with a 0 cm−2 density of micropipes (4mp) having tubal diameters of down to 1000 μm, and a not greater than 0.1 cm−2 density of micropipes (4mp) having tubal diameters of between 100 μm and less than 1000 μm; and a step of growing AlN crystal (5) onto the major face (4m) by vapor-phase deposition.
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