发明申请
US20100244032A1 ALUMINUM-NICKEL ALLOY WIRING MATERIAL, DEVICE FOR A THIN FILM TRANSISTOR AND A THIN FILM TRANSISTOR SUBSTRATE USING THE SAME, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE
审中-公开
铝 - 镍合金材料，薄膜晶体管的装置和使用其的薄膜晶体管基板以及制造薄膜晶体管基板的方法
- 专利标题： ALUMINUM-NICKEL ALLOY WIRING MATERIAL, DEVICE FOR A THIN FILM TRANSISTOR AND A THIN FILM TRANSISTOR SUBSTRATE USING THE SAME, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE
- 专利标题（中）： 铝 - 镍合金材料，薄膜晶体管的装置和使用其的薄膜晶体管基板以及制造薄膜晶体管基板的方法
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申请号： US12751136申请日： 2010-03-31
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公开(公告)号： US20100244032A1公开(公告)日： 2010-09-30
- 发明人: Pil Sang YUN , Byeong-Beom KIM , Changoh JEONG , Yangho BAE , Shigeki TOKUCHI , Ryoma TSUKUDA , Yoshinori MATSUURA , Takashi KUBOTA
- 申请人： Pil Sang YUN , Byeong-Beom KIM , Changoh JEONG , Yangho BAE , Shigeki TOKUCHI , Ryoma TSUKUDA , Yoshinori MATSUURA , Takashi KUBOTA
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： JP2009-085484 20090331; KR10-2009-0108235 20091110
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/283 ; C22C21/00 ; C23C14/34
摘要：
An Aluminum-Nickel alloy wiring material includes Aluminum, Nickel, Cerium, and Boron. A thin film transistor includes the Aluminum-Nickel alloy wiring material. A sputtering target comprises Aluminum, Nickel, Cerium and Boron. A method of manufacturing a thin film transistor substrate comprises disposing a thin film transistor on a substrate, wherein the thin film transistor includes a wiring circuit layer comprising Aluminum, Nickel, Cerium, and Boron. The Nickel, Cerium and Boron satisfy the following inequalities; 0.5≦X≦5.0, 0.01≦Y≦1.0, and 0.01≦Z≦1.0, respectively, wherein X represents an atomic percentage of Nickel content, Y represents an atomic percentage of Cerium content, and Z represents an atomic percentage of Boron content.
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