发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12724713申请日： 2010-03-16
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公开(公告)号： US20100244119A1公开(公告)日： 2010-09-30
- 发明人: Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-072950 20090324
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.
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