发明申请
US20100244206A1 METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURRENT IMPROVEMENT FOR HIGH-K METAL GATE TRANSISTORS
审中-公开
用于高K金属栅极晶体管的阈值电压控制和驱动电流改进的方法和结构
- 专利标题： METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURRENT IMPROVEMENT FOR HIGH-K METAL GATE TRANSISTORS
- 专利标题（中）： 用于高K金属栅极晶体管的阈值电压控制和驱动电流改进的方法和结构
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申请号： US12414794申请日： 2009-03-31
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公开(公告)号： US20100244206A1公开(公告)日： 2010-09-30
- 发明人: Huiming Bu , Michael P. Chudzik , Wei He , Rashmi Jha , Young-Hee Kim , Siddarth A. Krishnan , Renee T. Mo , Naim Moumen , Wesley C. Natzle
- 申请人： Huiming Bu , Michael P. Chudzik , Wei He , Rashmi Jha , Young-Hee Kim , Siddarth A. Krishnan , Renee T. Mo , Naim Moumen , Wesley C. Natzle
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/314
摘要：
A method of forming a device includes providing a substrate, forming an interfacial layer on the substrate, depositing a high-k dielectric layer on the interfacial layer, depositing an oxygen scavenging layer on the high-k dielectric layer and performing an anneal. A high-k metal gate transistor includes a substrate, an interfacial layer on the substrate, a high-k dielectric layer on the interfacial layer and an oxygen scavenging layer on the high-k dielectric layer.
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