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1.发明申请METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURRENT IMPROVEMENT FOR HIGH-K METAL GATE TRANSISTORS 审中-公开用于高K金属栅极晶体管的阈值电压控制和驱动电流改进的方法和结构公开(公告)号：US20100244206A1
公开(公告)日：2010-09-30
申请号：US12414794
申请日：2009-03-31
申请人： Huiming Bu , Michael P. Chudzik , Wei He , Rashmi Jha , Young-Hee Kim , Siddarth A. Krishnan , Renee T. Mo , Naim Moumen , Wesley C. Natzle
发明人： Huiming Bu , Michael P. Chudzik , Wei He , Rashmi Jha , Young-Hee Kim , Siddarth A. Krishnan , Renee T. Mo , Naim Moumen , Wesley C. Natzle
IPC分类号： H01L23/00 , H01L21/314
CPC分类号： H01L21/28202 , H01L21/28176 , H01L21/28185 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a device includes providing a substrate, forming an interfacial layer on the substrate, depositing a high-k dielectric layer on the interfacial layer, depositing an oxygen scavenging layer on the high-k dielectric layer and performing an anneal. A high-k metal gate transistor includes a substrate, an interfacial layer on the substrate, a high-k dielectric layer on the interfacial layer and an oxygen scavenging layer on the high-k dielectric layer.
摘要翻译： 形成器件的方法包括提供衬底，在衬底上形成界面层，在界面层上沉积高k电介质层，在高k电介质层上沉积氧气清除层并执行退火。 高k金属栅极晶体管包括衬底，衬底上的界面层，界面层上的高k电介质层和高k电介质层上的氧清除层。
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2.发明授权High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof 失效在电介质/硅衬底界面处耐氧化物生长的高k电介质栅极结构及其制造方法公开(公告)号：US08575709B2
公开(公告)日：2013-11-05
申请号：US13556795
申请日：2012-07-24
申请人： Huiming Bu , Michael P. Chudzik , Wei He , William K. Henson , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Wesley C. Natzle
发明人： Huiming Bu , Michael P. Chudzik , Wei He , William K. Henson , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Wesley C. Natzle
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L21/28088 , H01L21/2822 , H01L29/4966 , H01L29/51 , H01L29/66575
摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.
摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。
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3.发明申请HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE DIELECTRIC/SILICON SUBSTRATE INTERFACE AND METHODS OF MANUFACTURE THEREOF 失效介电/硅基板界面上耐高氧氧化物生长的高K电介质栅结构及其制造方法公开(公告)号：US20120286374A1
公开(公告)日：2012-11-15
申请号：US13556795
申请日：2012-07-24
申请人： Huiming Bu , Michael P. Chudzik , Wei He , William K. Henson , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Wesley C. Natzle
发明人： Huiming Bu , Michael P. Chudzik , Wei He , William K. Henson , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Wesley C. Natzle
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L21/28088 , H01L21/2822 , H01L29/4966 , H01L29/51 , H01L29/66575
摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.
摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。
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4.发明授权High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof 有权在电介质/硅衬底界面处耐氧化物生长的高k电介质栅极结构及其制造方法公开(公告)号：US08318565B2
公开(公告)日：2012-11-27
申请号：US12721608
申请日：2010-03-11
申请人： Huiming Bu , Michael P. Chudzik , Wei He , William K. Henson , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Wesley C. Natzle
发明人： Huiming Bu , Michael P. Chudzik , Wei He , William K. Henson , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Wesley C. Natzle
IPC分类号： H01L21/336
CPC分类号： H01L29/78 , H01L21/28088 , H01L21/2822 , H01L29/4966 , H01L29/51 , H01L29/66575
摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.
摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。
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5.发明申请HIGH-K DIELECTRIC GATE STRUCTURES RESISTANT TO OXIDE GROWTH AT THE DIELECTRIC/SILICON SUBSTRATE INTERFACE AND METHODS OF MANUFACTURE THEREOF 有权介电/硅基板界面上耐高氧氧化物生长的高K电介质栅结构及其制造方法公开(公告)号：US20110221012A1
公开(公告)日：2011-09-15
申请号：US12721608
申请日：2010-03-11
申请人： Huiming Bu , Michael P. Chudzik , Wei He , William K. Henson , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Wesley C. Natzle
发明人： Huiming Bu , Michael P. Chudzik , Wei He , William K. Henson , Siddarth A. Krishnan , Unoh Kwon , Naim Moumen , Wesley C. Natzle
CPC分类号： H01L29/78 , H01L21/28088 , H01L21/2822 , H01L29/4966 , H01L29/51 , H01L29/66575
摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.
摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。
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6.发明申请STRAINED METAL GATE STRUCTURE FOR CMOS DEVICES WITH IMPROVED CHANNEL MOBILITY AND METHODS OF FORMING THE SAME 审中-公开具有改进的通道移动性的CMOS器件的应变金属栅结构及其形成方法公开(公告)号：US20080203485A1
公开(公告)日：2008-08-28
申请号：US11680108
申请日：2007-02-28
申请人： Michael P. Chudzik , Wei He , Renee T. Mo , Naim Moumen , Vijay Narayanan , Dae-gyu Park , Vamsi Paruchuri
发明人： Michael P. Chudzik , Wei He , Renee T. Mo , Naim Moumen , Vijay Narayanan , Dae-gyu Park , Vamsi Paruchuri
IPC分类号： H01L29/76 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/28088 , H01L21/823842 , H01L29/4966 , H01L29/78 , H01L29/7845
摘要： A gate structure for complementary metal oxide semiconductor (CMOS) devices includes a first gate stack having a first gate dielectric layer formed over a substrate, and a first metal layer formed over the first gate dielectric layer. A second gate stack includes a second gate dielectric layer formed over the substrate and a second metal layer formed over the second gate dielectric layer. The first metal layer is formed in manner so as to impart a tensile stress on the substrate, and the second metal layer is formed in a manner so as to impart a compressive stress on the substrate.
摘要翻译： 用于互补金属氧化物半导体（CMOS）器件的栅极结构包括具有形成在衬底上的第一栅极介电层的第一栅极堆叠和形成在第一栅极介电层上的第一金属层。 第二栅极堆叠包括形成在衬底上的第二栅极电介质层和形成在第二栅极介电层上的第二金属层。 第一金属层形成为在基板上施加拉伸应力，并且第二金属层以使得在基板上施加压应力的方式形成。
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7.发明申请SCANNING TRANSMISSION ELECTRON MICROSCOPE WITH VARIABLE AXIS OBJECTIVE LENS AND DETECTIVE SYSTEM 有权扫描传输电子显微镜与可变轴目标镜头和检测系统公开(公告)号：US20160351371A1
公开(公告)日：2016-12-01
申请号：US14940102
申请日：2015-11-12
申请人： Shuai Li , Wei He , Zhongwei Chen
发明人： Shuai Li , Wei He , Zhongwei Chen
IPC分类号： H01J37/145 , H01J37/28 , H01J37/21 , H01J37/147
CPC分类号： H01J37/145 , H01J37/1477 , H01J37/21 , H01J37/28 , H01J2237/0473 , H01J2237/2802
摘要： The present invention provides a scanning transmission electron microscope (STEM). In the STEM, a specimen is sandwiched between a variable axis objective lens and a variable axis collection lens. The axis of the collection lens varies along with the variation of the objective lens axis in a coordinated manner. The STEM of the invention exhibits technical merits such as large scanning field, high image resolution across the entire scanning field, and high throughput, among others.
摘要翻译： 本发明提供扫描透射电子显微镜（STEM）。 在STEM中，将样本夹在可变轴物镜和可变轴收集透镜之间。 收集透镜的轴线随着物镜轴的协调变化而变化。 本发明的STEM具有如扫描场大，整个扫描场的高图像分辨率，高通量等技术优点。
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8.发明申请Methods for improving rice nutrition via manipulation of starch crystalline structure and nutrient penetration treatment 审中-公开通过操作淀粉结晶结构和营养渗透处理改善水稻营养的方法公开(公告)号：US20150335046A1
公开(公告)日：2015-11-26
申请号：US14544853
申请日：2015-02-23
申请人： Zhaohua Peng , Vivian Peng , Wei He
发明人： Zhaohua Peng , Vivian Peng , Wei He
IPC分类号： A23L1/182
摘要： The methods of the invention provide improved rice grain nutrition by manipulation of the rice starch crystalline structure leading to easier penetration of nutrients into the rice grain and enhancement of rice grains with nutrients, thereby creating enhanced rice grain products. In addition, methods of direct delivery of nutrients into rice grains are also presented.
摘要翻译： 本发明的方法通过操作大米淀粉结晶结构提供改善的稻谷营养，导致营养物质进入米粒更容易渗透，并增加米粒营养，从而产生增强的米粒产品。 此外，还提出了将营养物质直接输送到稻谷中的方法。
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公开(公告)号：US20150155846A1
公开(公告)日：2015-06-04
申请号：US14400655
申请日：2012-05-22
申请人： Wei He , Wenliang Qiao , Qingyu Guo
发明人： Wei He , Wenliang Qiao , Qingyu Guo
CPC分类号： H03H7/38 , H01Q5/335 , H03H2007/386 , H04B1/0458 , H04B1/18 , H04W88/06 , Y10T29/49016
摘要： An apparatus comprising: a first resonant circuit configured to have an impedance at a first operational frequency band to impedance match a first radiator to radio circuitry, and to have an impedance at a second operational frequency band to impedance match a second radiator to the radio circuitry; a second resonant circuit configured to have an impedance at the first operational frequency band to impedance match the first radiator to the radio circuitry, and to have an impedance at the second operational frequency band to impedance match the second radiator to the radio circuitry; and a third resonant circuit configured to have an impedance at the first operational frequency band to impedance match the first radiator to the radio circuitry, and to have an impedance at the second operational frequency band to impedance match the second radiator to the radio circuitry.
摘要翻译： 一种装置，包括：第一谐振电路，其被配置为具有在第一工作频带处的阻抗以阻抗匹配第一辐射器与无线电电路，并且具有在第二工作频带处的阻抗以将第二辐射器阻抗匹配到所述无线电电路 ; 第二谐振电路，其被配置为具有在所述第一工作频带处的阻抗以使所述第一辐射器与所述无线电电路匹配，并且具有在所述第二工作频带处的阻抗以使所述第二辐射器与所述无线电电路匹配; 以及第三谐振电路，其被配置为具有在所述第一工作频带处的阻抗以使所述第一辐射器与所述无线电电路匹配，并且具有在所述第二操作频带处的阻抗以使所述第二辐射器与所述无线电电路匹配。
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公开(公告)号：US09027686B2
公开(公告)日：2015-05-12
申请号：US14348096
申请日：2011-10-12
申请人： Wei He , Mathew Frederick Heinecke
发明人： Wei He , Mathew Frederick Heinecke
IPC分类号： B62D35/02
CPC分类号： B62D35/02 , B62D35/001 , B62D37/02 , Y02T10/88
摘要： A truck includes a frame, an operator cab on the frame and a drive axle having a differential. The differential can be connected to a drive shaft. A fairing for directing air flow around the differential is attached to the frame forward of the drive axle and forward of the differential. The fairing can have a non-deflected position and a deflected position.
摘要翻译： 卡车包括框架，框架上的操作驾驶室和具有差速器的驱动桥。 差速器可以连接到驱动轴。 用于将气流引导到差速器周围的整流罩附接到驱动轴前方的框架和差速器的前方。 整流罩可以具有非偏转位置和偏转位置。
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