公开(公告)号：US20100244206A1

公开(公告)日：2010-09-30

申请号：US12414794

申请日：2009-03-31

申请人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  Rashmi Jha ,  Young-Hee Kim ,  Siddarth A. Krishnan ,  Renee T. Mo ,  Naim Moumen ,  Wesley C. Natzle

发明人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  Rashmi Jha ,  Young-Hee Kim ,  Siddarth A. Krishnan ,  Renee T. Mo ,  Naim Moumen ,  Wesley C. Natzle

IPC分类号： H01L23/00 ,  H01L21/314

CPC分类号： H01L21/28202 ,  H01L21/28176 ,  H01L21/28185 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a device includes providing a substrate, forming an interfacial layer on the substrate, depositing a high-k dielectric layer on the interfacial layer, depositing an oxygen scavenging layer on the high-k dielectric layer and performing an anneal. A high-k metal gate transistor includes a substrate, an interfacial layer on the substrate, a high-k dielectric layer on the interfacial layer and an oxygen scavenging layer on the high-k dielectric layer.

摘要翻译： 形成器件的方法包括提供衬底，在衬底上形成界面层，在界面层上沉积高k电介质层，在高k电介质层上沉积氧气清除层并执行退火。 高k金属栅极晶体管包括衬底，衬底上的界面层，界面层上的高k电介质层和高k电介质层上的氧清除层。

公开(公告)号：US20120286374A1

公开(公告)日：2012-11-15

申请号：US13556795

申请日：2012-07-24

申请人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

发明人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

IPC分类号： H01L29/78

CPC分类号： H01L29/78 ,  H01L21/28088 ,  H01L21/2822 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66575

摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.

摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。

公开(公告)号：US08575709B2

公开(公告)日：2013-11-05

申请号：US13556795

申请日：2012-07-24

申请人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

发明人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

IPC分类号： H01L29/78

CPC分类号： H01L29/78 ,  H01L21/28088 ,  H01L21/2822 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66575

摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.

摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。

公开(公告)号：US08318565B2

公开(公告)日：2012-11-27

申请号：US12721608

申请日：2010-03-11

申请人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

发明人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

IPC分类号： H01L21/336

CPC分类号： H01L29/78 ,  H01L21/28088 ,  H01L21/2822 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66575

摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.

摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。

公开(公告)号：US20110221012A1

公开(公告)日：2011-09-15

申请号：US12721608

申请日：2010-03-11

申请人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

发明人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/78 ,  H01L21/28088 ,  H01L21/2822 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66575

摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.

摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。

公开(公告)号：US07498271B1

公开(公告)日：2009-03-03

申请号：US12145035

申请日：2008-06-24

申请人： Ricardo A. Donaton ,  Rashmi Jha ,  Siddarth A. Krishnan ,  Xi Li ,  Renee T. Mo ,  Naim Moumen ,  Wesley C. Natzle ,  Ravikumar Ramachandran ,  Richard S. Wise

发明人： Ricardo A. Donaton ,  Rashmi Jha ,  Siddarth A. Krishnan ,  Xi Li ,  Renee T. Mo ,  Naim Moumen ,  Wesley C. Natzle ,  Ravikumar Ramachandran ,  Richard S. Wise

IPC分类号： H01L21/31

CPC分类号： H01L21/31138 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention, in one embodiment, provides a method of forming a gate structure including providing a substrate including a semiconducting device region, a high-k dielectric material present atop the semiconducting device region, and a metal gate conductor atop the high-k dielectric material, applying a photoresist layer atop the metal gate conductor; patterning the photoresist layer to provide an etch mask overlying a portion of the metal gate conductor corresponding to a gate stack; etching the metal gate conductor and the high-k dielectric material selective to the etch mask; and removing the etch mask with a substantially oxygen free nitrogen based plasma.

摘要翻译： 本发明在一个实施例中提供了一种形成栅极结构的方法，该栅极结构包括提供包括半导体器件区域的衬底，在半导体器件区域顶部存在的高k电介质材料以及高k电介质顶部的金属栅极导体 材料，在金属栅极导体顶上施加光致抗蚀剂层; 图案化光致抗蚀剂层以提供覆盖对应于栅极堆叠的金属栅极导体的一部分的蚀刻掩模; 蚀刻对蚀刻掩模有选择性的金属栅极导体和高k电介质材料; 并用基本上不含氧的氮气等离子体去除蚀刻掩模。

公开(公告)号：US20110121401A1

公开(公告)日：2011-05-26

申请号：US13019949

申请日：2011-02-02

申请人： Dae-Gyu Park ,  Michael P. Chudzik ,  Rashmi Jha ,  Siddarth A. Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Dae-Gyu Park ,  Michael P. Chudzik ,  Rashmi Jha ,  Siddarth A. Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L27/092

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/785

摘要： CMOS circuit structures are disclosed with the PFET and NFET devices having high-k dielectric layers consisting of the same gate insulator material, and metal gate layers consisting of the same gate metal material. The PFET device has a “p” interface control layer which is capable of shifting the effective-workfunction of the gate in the p-direction. In a representative embodiment of the invention the “p” interface control layer is aluminum oxide. The NFET device may have an “n” interface control layer. The materials of the “p” and “n” interface control layers are differing materials. The “p” and “n” interface control layers are positioned to the opposite sides of their corresponding high-k dielectric layers. Methods for fabricating the CMOS circuit structures with the oppositely positioned “p” and “n” interface control layers are also disclosed.

摘要翻译： 公开了CMOS电路结构，其中PFET和NFET器件具有由相同的栅极绝缘体材料构成的高k电介质层以及由相同栅极金属材料组成的金属栅极层。 PFET器件具有能够沿p方向移动栅极的有效功能的“p”接口控制层。 在本发明的代表性实施例中，“p”界面控制层是氧化铝。 NFET器件可以具有“n”个界面控制层。 “p”和“n”界面控制层的材料是不同的材料。 “p”和“n”界面控制层位于其相应的高k电介质层的相对侧。 还公开了制造具有相对定位的“p”和“n”界面控制层的CMOS电路结构的方法。

公开(公告)号：US07947549B2

公开(公告)日：2011-05-24

申请号：US12037158

申请日：2008-02-26

申请人： Dae-Gyu Park ,  Michael P Chudzik ,  Rashmi Jha ,  Siddarth A Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Dae-Gyu Park ,  Michael P Chudzik ,  Rashmi Jha ,  Siddarth A Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/785

摘要： CMOS circuit structures are disclosed with the PFET and NFET devices having high-k dielectric layers consisting of the same gate insulator material, and metal gate layers consisting of the same gate metal material. The PFET device has a “p” interface control layer which is capable of shifting the effective-workfunction of the gate in the p-direction. In a representative embodiment of the invention the “p” interface control layer is aluminum oxide. The NFET device may have an “n” interface control layer. The materials of the “p” and “n” interface control layers are differing materials. The “p” and “n” interface control layers are positioned to the opposite sides of their corresponding high-k dielectric layers. Methods for fabricating the CMOS circuit structures with the oppositely positioned “p” and “n” interface control layers are also disclosed.

摘要翻译： 公开了CMOS电路结构，其中PFET和NFET器件具有由相同的栅极绝缘体材料构成的高k电介质层以及由相同栅极金属材料组成的金属栅极层。 PFET器件具有能够沿p方向移动栅极的有效功能的“p”接口控制层。 在本发明的代表性实施例中，“p”界面控制层是氧化铝。 NFET器件可以具有“n”个界面控制层。 “p”和“n”界面控制层的材料是不同的材料。 “p”和“n”界面控制层位于其相应的高k电介质层的相对侧。 还公开了制造具有相对定位的“p”和“n”界面控制层的CMOS电路结构的方法。

公开(公告)号：US20090212369A1

公开(公告)日：2009-08-27

申请号：US12037158

申请日：2008-02-26

申请人： Dae-Gyu Park ,  Michael P. Chudzik ,  Rashmi Jha ,  Siddarth A. Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Dae-Gyu Park ,  Michael P. Chudzik ,  Rashmi Jha ,  Siddarth A. Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/785

摘要： CMOS circuit structures are disclosed with the PFET and NFET devices having high-k dielectric layers consisting of the same gate insulator material, and metal gate layers consisting of the same gate metal material. The PFET device has a “p” interface control layer which is capable of shifting the effective-workfunction of the gate in the p-direction. In a representative embodiment of the invention the “p” interface control layer is aluminum oxide. The NFET device may have an “n” interface control layer. The materials of the “p” and “n” interface control layers are differing materials. The “p” and “n” interface control layers are positioned to the opposite sides of their corresponding high-k dielectric layers. Methods for fabricating the CMOS circuit structures with the oppositely positioned “p” and “n” interface control layers are also disclosed.

摘要翻译： 公开了CMOS电路结构，其中PFET和NFET器件具有由相同的栅极绝缘体材料构成的高k电介质层以及由相同栅极金属材料组成的金属栅极层。 PFET器件具有能够沿p方向移动栅极的有效功能的“p”接口控制层。 在本发明的代表性实施例中，“p”界面控制层是氧化铝。 NFET器件可以具有“n”个界面控制层。 “p”和“n”界面控制层的材料是不同的材料。 “p”和“n”界面控制层位于其相应的高k电介质层的相对侧。 还公开了制造具有相对定位的“p”和“n”界面控制层的CMOS电路结构的方法。

公开(公告)号：US08183642B2

公开(公告)日：2012-05-22

申请号：US13019949

申请日：2011-02-02

申请人： Dae-Gyu Park ,  Michael P Chudzik ,  Rashmi Jha ,  Siddarth A Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Dae-Gyu Park ,  Michael P Chudzik ,  Rashmi Jha ,  Siddarth A Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/785

摘要： CMOS circuit structures are disclosed with the PFET and NFET devices having high-k dielectric layers consisting of the same gate insulator material, and metal gate layers consisting of the same gate metal material. The PFET device has a “p” interface control layer which is capable of shifting the effective-workfunction of the gate in the p-direction. In a representative embodiment of the invention the “p” interface control layer is aluminum oxide. The NFET device may have an “n” interface control layer. The materials of the “p” and “n” interface control layers are differing materials. The “p” and “n” interface control layers are positioned to the opposite sides of their corresponding high-k dielectric layers. Methods for fabricating the CMOS circuit structures with the oppositely positioned “p” and “n” interface control layers are also disclosed.

摘要翻译： 公开了CMOS电路结构，其中PFET和NFET器件具有由相同的栅极绝缘体材料构成的高k电介质层以及由相同栅极金属材料组成的金属栅极层。 PFET器件具有能够沿p方向移动栅极的有效功能的“p”接口控制层。 在本发明的代表性实施例中，“p”界面控制层是氧化铝。 NFET器件可以具有“n”个界面控制层。 “p”和“n”界面控制层的材料是不同的材料。 “p”和“n”界面控制层位于其相应的高k电介质层的相对侧。 还公开了制造具有相对定位的“p”和“n”界面控制层的CMOS电路结构的方法。