发明申请
- 专利标题： DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS
- 专利标题（中）： 缺陷检查方法和缺陷检查装置
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申请号： US12376407申请日： 2007-08-07
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公开(公告)号： US20100245812A1公开(公告)日： 2010-09-30
- 发明人: Misako Saito , Teruyuki Hayashi , Kaoru Fujiwara
- 申请人： Misako Saito , Teruyuki Hayashi , Kaoru Fujiwara
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2006-220162 20060811
- 国际申请： PCT/JP2007/065451 WO 20070807
- 主分类号： G01N21/01
- IPC分类号： G01N21/01
摘要：
Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which secondary inspection is to be performed are selected from the regions. One or more defects are detected by performing the secondary inspection using an electron beam on the selected regions.
公开/授权文献
- US08040504B2 Defect inspecting method and defect inspecting apparatus 公开/授权日：2011-10-18
信息查询
