Memory devices and methods are disclosed to facilitate adjustment of program voltages applied during a program operation based upon erase operation cycle counter values stored in the memory device. In one such embodiment, an erase cycle counter is maintained for each block of a memory device and is stored in the associated block of memory. Programming voltage levels utilized during program operations of memory cells are determined, at least in part, based upon the value of the erase cycle counter stored in a memory block undergoing a programming operation, for example.