-
公开(公告)号：US08036035B2
公开(公告)日：2011-10-11
申请号：US12410696
申请日：2009-03-25
CPC分类号： G11C11/5635 , G11C16/10 , G11C16/3404 , G11C16/344 , G11C16/349 , G11C2211/5641
摘要： Memory devices and methods are disclosed to facilitate adjustment of program voltages applied during a program operation based upon erase operation cycle counter values stored in the memory device. In one such embodiment, an erase cycle counter is maintained for each block of a memory device and is stored in the associated block of memory. Programming voltage levels utilized during program operations of memory cells are determined, at least in part, based upon the value of the erase cycle counter stored in a memory block undergoing a programming operation, for example.
摘要翻译： 公开了存储器件和方法，以便于基于存储在存储器件中的擦除操作周期计数器值来调节在编程操作期间施加的编程电压。 在一个这样的实施例中，为存储器设备的每个块维护擦除周期计数器，并将其存储在相关的存储器块中。 至少部分地基于存储在经历编程操作的存储块中的擦除周期计数器的值来确定在存储器单元的编程操作期间使用的编程电压电平。
-
公开(公告)号：US20100246265A1
公开(公告)日：2010-09-30
申请号：US12410696
申请日：2009-03-25
CPC分类号： G11C11/5635 , G11C16/10 , G11C16/3404 , G11C16/344 , G11C16/349 , G11C2211/5641
摘要： Memory devices and methods are disclosed to facilitate adjustment of program voltages applied during a program operation based upon erase operation cycle counter values stored in the memory device. In one such embodiment, an erase cycle counter is maintained for each block of a memory device and is stored in the associated block of memory. Programming voltage levels utilized during program operations of memory cells are determined, at least in part, based upon the value of the erase cycle counter stored in a memory block undergoing a programming operation, for example.
摘要翻译： 公开了存储器件和方法，以便于基于存储在存储器件中的擦除操作周期计数器值来调节在编程操作期间施加的编程电压。 在一个这样的实施例中，为存储器设备的每个块维护擦除周期计数器，并将其存储在相关的存储器块中。 至少部分地基于存储在经历编程操作的存储块中的擦除周期计数器的值来确定在存储器单元的编程操作期间使用的编程电压电平。
-
公开(公告)号：US08358538B2
公开(公告)日：2013-01-22
申请号：US13268158
申请日：2011-10-07
CPC分类号： G11C11/5635 , G11C16/10 , G11C16/3404 , G11C16/344 , G11C16/349 , G11C2211/5641
摘要： Memory devices to facilitate adjustment of program voltages applied during a program operation based upon erase operation cycle counter values stored in the memory device. In one such embodiment, an erase cycle counter is maintained for each block of a memory device and is stored in the associated block of memory. Programming voltage levels utilized during program operations of memory cells are determined, at least in part, based upon the value of the erase cycle counter stored in a memory block undergoing a programming operation, for example.
摘要翻译： 存储器件，用于根据存储在存储器件中的擦除操作周期计数值来调节在编程操作期间施加的编程电压。 在一个这样的实施例中，为存储器设备的每个块维护擦除周期计数器，并将其存储在相关的存储器块中。 至少部分地基于存储在经历编程操作的存储块中的擦除周期计数器的值来确定在存储器单元的编程操作期间使用的编程电压电平。
-
公开(公告)号：US20120026792A1
公开(公告)日：2012-02-02
申请号：US13268158
申请日：2011-10-07
CPC分类号： G11C11/5635 , G11C16/10 , G11C16/3404 , G11C16/344 , G11C16/349 , G11C2211/5641
摘要： Memory devices to facilitate adjustment of program voltages applied during a program operation based upon erase operation cycle counter values stored in the memory device. In one such embodiment, an erase cycle counter is maintained for each block of a memory device and is stored in the associated block of memory. Programming voltage levels utilized during program operations of memory cells are determined, at least in part, based upon the value of the erase cycle counter stored in a memory block undergoing a programming operation, for example.
摘要翻译： 存储器件，用于根据存储在存储器件中的擦除操作周期计数值来调节在编程操作期间施加的编程电压。 在一个这样的实施例中，为存储器设备的每个块维护擦除周期计数器，并将其存储在相关的存储器块中。 至少部分地基于存储在经历编程操作的存储块中的擦除周期计数器的值来确定在存储器单元的编程操作期间使用的编程电压电平。
-
公开(公告)号：US08395939B2
公开(公告)日：2013-03-12
申请号：US13090754
申请日：2011-04-20
IPC分类号： G11C11/34
CPC分类号： G11C16/04 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/26 , G11C29/76 , G11C29/789 , G11C29/82 , G11C2211/5621 , G11C2211/5642
摘要： In one or more of the disclosed embodiments, a read operation is compensated for back pattern effect. A bit line current is generated by a read operation that biases the word lines. As part of a back pattern effect measurement phase, at predetermined time intervals an indication of the discharge status of the bit line is stored in a latch of a set of N latches coupled to each bit line. At the end of the measurement phase, the set of latches contains a multiple bit word that is an indication of the back pattern effect experienced by that particular series string of memory cells. This back pattern effect indication is used in subsequent read operations to adjust the timing of the operation.
摘要翻译： 在所公开的一个或多个实施例中，读取操作被补偿以用于背面图案效果。 通过偏置字线的读取操作产生位线电流。 作为背景图案效果测量阶段的一部分，在预定的时间间隔，将位线的放电状态的指示存储在耦合到每个位线的一组N个锁存器的锁存器中。 在测量阶段结束时，锁存器组包含一个多位字，它是该特定串行存储单元所经历的反向图案效应的指示。 这种背面图案效果指示用于随后的读取操作以调整操作的时间。
-
公开(公告)号：US08233329B2
公开(公告)日：2012-07-31
申请号：US12365589
申请日：2009-02-04
IPC分类号： G11C11/34
CPC分类号： G11C16/3427 , G11C11/5628 , G11C16/10 , G11C16/3418 , G11C27/02 , G11C2211/5642 , G11C2211/5646
摘要： Methods of programming a memory, memory devices, and systems are disclosed, for example. In one such method, each data line of a memory to be programmed is biased differently depending upon whether one or more of the data lines adjacent the data line are inhibited. In one such system, a connection circuit provides data corresponding to the inhibit status of a target data line to page buffers associated with data lines adjacent to the target data line.
摘要翻译： 例如，公开了存储器，存储器件和系统的编程方法。 在一种这样的方法中，根据是否禁止与数据线相邻的一条或多条数据线，要编程的存储器的每条数据线被不同地偏置。 在一个这样的系统中，连接电路将对应于目标数据线的禁止状态的数据提供给与与目标数据线相邻的数据线相关联的寻呼缓冲器。
-
公开(公告)号：US08174897B2
公开(公告)日：2012-05-08
申请号：US13170420
申请日：2011-06-28
IPC分类号： G11C11/34
CPC分类号： G11C16/3454
摘要： Methods for programming a memory device and memory devices are provided. According to at least one such method, a selected memory cell is programmed by a series of programming pulses. The series of programming pulses are configured in sets of programming pulses where each set has the same quantity of pulses and each programming pulse in the set has substantially the same amplitude (i.e., programming voltage). The amplitude of the programming pulses of subsequent sets is increased by a step voltage from the previous amplitude.
摘要翻译： 提供了用于编程存储器件和存储器件的方法。 根据至少一种这样的方法，通过一系列编程脉冲对所选存储单元进行编程。 一系列编程脉冲被配置为编程脉冲，其中每组具有相同的脉冲量，并且组中的每个编程脉冲具有基本上相同的幅度（即编程电压）。 后续组的编程脉冲的幅度通过来自先前振幅的阶跃电压而增加。
-
公开(公告)号：US20100157685A1
公开(公告)日：2010-06-24
申请号：US12477314
申请日：2009-06-03
IPC分类号： G11C16/04
CPC分类号： G11C16/3454
摘要： Methods for programming a memory device, memory devices, and a memory systems are provided. According to at least one such method, a selected memory cell is programmed by a series of programming pulses. The series of programming pulses are configured in sets of programming pulses where each set has the same quantity of pulses and each programming pulse in the set has substantially the same amplitude (i.e., programming voltage). The amplitude of the programming pulses of subsequent sets is increased by a step voltage from the previous amplitude.
摘要翻译： 提供了用于编程存储器件，存储器件和存储器系统的方法。 根据至少一种这样的方法，通过一系列编程脉冲对所选存储单元进行编程。 一系列编程脉冲被配置为编程脉冲，其中每组具有相同的脉冲量，并且组中的每个编程脉冲具有基本上相同的幅度（即编程电压）。 后续组的编程脉冲的幅度通过来自先前振幅的阶跃电压而增加。
-
公开(公告)号：US20090290426A1
公开(公告)日：2009-11-26
申请号：US12123765
申请日：2008-05-20
IPC分类号： G11C16/06
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C16/3427
摘要： In programming a selected word line of memory cells, a first program verify or read operation is performed, after one page of a selected word line is programmed, in order to determine a first quantity of memory cells that have been programmed to a predetermined reference point in the programmed first page distribution. Prior to programming the second page of the selected word line, a second program verify or read operation is performed to determine a second quantity of cells that are still at the reference point. The difference between the first and second quantities is an indication of the quantity of cells that experienced quick charge loss. The difference is used to determine an adjustment voltage for the second page verification operation after programming of the second page.
摘要翻译： 在编程存储器单元的选定字线时，在对所选字线的一页进行编程之后执行第一程序验证或读取操作，以便确定已被编程到预定参考点的第一数量的存储器单元 在编程的第一页分发。 在对所选字线的第二页进行编程之前，执行第二程序验证或读取操作以确定仍在参考点的第二数量的单元。 第一和第二数量之间的差异表示经历快速电荷损失的电池数量。 该差异用于在编程第二页之后确定用于第二页验证操作的调整电压。
-
公开(公告)号：US20080285341A1
公开(公告)日：2008-11-20
申请号：US12038704
申请日：2008-02-27
CPC分类号： G11C16/3418
摘要： Embodiments of the present disclosure provide methods, devices, modules, and systems for reading non-volatile multilevel memory cells. One method includes receiving a request to read data stored in a first cell of a first word line, performing a read operation on an adjacent cell of a second word line in response to the request, determining whether the first cell is in a disturbed condition based on the read operation. The method includes reading data stored in the first cell in response to the read request by applying a read reference voltage to the first word line and adjusting a sensing parameter if the first cell is in the disturbed condition.
摘要翻译： 本公开的实施例提供用于读取非易失性多电平存储器单元的方法，设备，模块和系统。 一种方法包括接收读取存储在第一字线的第一单元中的数据的请求，响应于该请求对第二字线的相邻单元执行读取操作，确定第一单元是否处于基于干扰状态 对读操作。 该方法包括：如果第一单元处于干扰状态，则通过将读取参考电压施加到第一字线并调整感测参数来读取响应于读取请求而存储在第一单元中的数据。
-
-
-
-
-
-
-
-
-
搜索结果
103 条记录 (耗时 0.032 秒)
