发明申请
- 专利标题： Method of growing GaN using CVD and HVPE
- 专利标题（中）： 使用CVD和HVPE生长GaN的方法
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申请号： US11808931申请日： 2007-06-13
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公开(公告)号： US20100248461A1公开(公告)日： 2010-09-30
- 发明人: Mitch M. C. Chou , Wen-Ching Hsu
- 申请人： Mitch M. C. Chou , Wen-Ching Hsu
- 申请人地址： TW Kaohsiung City TW Hsinchu City
- 专利权人： National Sun Yat-sen University,Sino American Silicon Prouducts Inc.
- 当前专利权人： National Sun Yat-sen University,Sino American Silicon Prouducts Inc.
- 当前专利权人地址： TW Kaohsiung City TW Hsinchu City
- 优先权： TW096110014 20070322
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.
公开/授权文献
- US07863164B2 Method of growing GaN using CVD and HVPE 公开/授权日：2011-01-04
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