摘要:
A lithium aluminum oxide (LiAlO2) substrate suitable for a zinc oxide (ZnO) buffer layer is found. The ZnO buffer layer is grown on the LiAlO2 substrate. Because the LiAlO2 substrate has a similar structure to that of the ZnO buffer layer, a quantum confined stark effect (QCSE) is effectively eliminated. And a photoelectrical device made with the present invention, like a light emitting diode, a piezoelectric material or a laser diode, thus obtains an enhanced light emitting efficiency.
摘要:
The present invention polishes a lithium aluminum oxide (LiAlo2) crystal several times with three different materials and then the LiAlo2 crystal are soaked into an acid solution to be washed for obtaining a LiAlo2 crystal of film-free, scratch-free with smooth surface.
摘要翻译:本发明用三种不同的材料将锂铝氧化物(LiAl 2 O 3)晶体抛光数次,然后将LiAl 2 Cl 2晶体浸泡在酸洗液中以得到 无光泽的LiAlo 2< 2>晶体,无光滑,表面光滑。
摘要:
A light emitting diode (LED) is made. The LED had a LiAlO2 substrate and a GaN layer. Between them, there is a zinc oxide (ZnO) layer. Because GaN and ZnO have a similar. Wurtzite structure, GaN can easily grow on ZnO. By using the ZnO layer, the GaN layer is successfully grown as a single crystal thin film on the LiAlO2 substrate. Thus, GaN defect density is reduced and lattice match is obtained to have a good crystal interface quality and an enhanced light emitting efficiency of a device thus made.
摘要:
The present invention is a light emitting device which uses a specific phosphor powder. The phosphor powder is a combination of cerium (Ce) and lithium aluminum oxide (LiAlO2). They are mixed under a specific range of composition ratio. With the specific phosphor powder applied, the light emitting device has advantages in a low cost, a reduced power consumption, an easy production, a long life, and so on. In addition, a transformation efficiency of the phosphor powder is high and so a light emitting efficiency of the light emitting device is enhanced.
摘要:
A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.
摘要:
The present invention is a light emitting device which uses a specific phosphor powder. The phosphor powder is a combination of cerium (Ce) and lithium aluminum oxide (LiAlO2). They are mixed under a specific range of composition ratio. With the specific phosphor powder applied, the light emitting device has advantages in a low cost, a reduced power consumption, an easy production, a long life, and so on. In addition, a transformation efficiency of the phosphor powder is high and so a light emitting efficiency of the light emitting device is enhanced.
摘要:
A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.
摘要:
A lithium aluminum oxide (LiAlO2) substrate suitable for a zinc oxide (ZnO) buffer layer is found. The ZnO buffer layer is grown on the LiAlO2 substrate. Because the LiAlO2 substrate has a similar structure to that of the ZnO buffer layer, a quantum confined stark effect (QCSE) is effectively eliminated. And a photoelectrical device made with the present invention, like a light emitting diode, a piezoelectric material or a laser diode, thus obtains an enhanced light emitting efficiency.
摘要翻译:发现适用于氧化锌(ZnO)缓冲层的氧化锂铝(LiAlO 2 N 2)衬底。 ZnO缓冲层在LiAlO 2衬底上生长。 由于LiAlO 2衬底具有与ZnO缓冲层类似的结构,因此有效地消除了量子限制的Stark效应(QCSE)。 并且,通过本发明制造的光电器件,如发光二极管,压电材料或激光二极管,从而获得增强的发光效率。
摘要:
In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.
摘要:
The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the invention is to prepare the second substrate. Subsequently, the fabricating method is to deposit a buffer layer on the second substrate. Then, the fabricating method is to deposit a semiconductor material layer on the buffer layer. The buffer layer assists the epitaxial growth of the semiconductor material layer, and serves as a lift-off layer. Finally, with an etching solution, the fabricating method is to only etch the lift-off layer to debond the second substrate away from the semiconductor material layer, where the semiconductor material layer serves as the first substrate.