Structure of LiAlO2 substrate having ZnO buffer layer
    1.
    发明授权
    Structure of LiAlO2 substrate having ZnO buffer layer 有权
    具有ZnO缓冲层的LiAlO 2衬底的结构

    公开(公告)号:US07812526B2

    公开(公告)日:2010-10-12

    申请号:US11808564

    申请日:2007-06-11

    摘要: A lithium aluminum oxide (LiAlO2) substrate suitable for a zinc oxide (ZnO) buffer layer is found. The ZnO buffer layer is grown on the LiAlO2 substrate. Because the LiAlO2 substrate has a similar structure to that of the ZnO buffer layer, a quantum confined stark effect (QCSE) is effectively eliminated. And a photoelectrical device made with the present invention, like a light emitting diode, a piezoelectric material or a laser diode, thus obtains an enhanced light emitting efficiency.

    摘要翻译: 发现适用于氧化锌(ZnO)缓冲层的氧化铝锂(LiAlO 2)底物。 在LiAlO 2衬底上生长ZnO缓冲层。 由于LiAlO 2衬底具有与ZnO缓冲层相似的结构,因此有效地消除了量子限制Stark效应(QCSE)。 并且,通过本发明制造的光电器件,如发光二极管,压电材料或激光二极管,从而获得增强的发光效率。

    Method of fabricating GaN LED
    3.
    发明申请
    Method of fabricating GaN LED 审中-公开
    制造GaN LED的方法

    公开(公告)号:US20080233671A1

    公开(公告)日:2008-09-25

    申请号:US11808565

    申请日:2007-06-11

    IPC分类号: H01L21/02

    CPC分类号: H01L33/007 H01L33/0079

    摘要: A light emitting diode (LED) is made. The LED had a LiAlO2 substrate and a GaN layer. Between them, there is a zinc oxide (ZnO) layer. Because GaN and ZnO have a similar. Wurtzite structure, GaN can easily grow on ZnO. By using the ZnO layer, the GaN layer is successfully grown as a single crystal thin film on the LiAlO2 substrate. Thus, GaN defect density is reduced and lattice match is obtained to have a good crystal interface quality and an enhanced light emitting efficiency of a device thus made.

    摘要翻译: 制造发光二极管(LED)。 LED具有LiAlO 2 N 2衬底和GaN层。 在它们之间,存在氧化锌(ZnO)层。 因为GaN和ZnO有类似的。 纤锌矿结构,GaN可以容易地在ZnO上生长。 通过使用ZnO层,GaN层在LiAlO 2衬底上成功生长为单晶薄膜。 因此,GaN缺陷密度降低,并且获得晶格匹配以具有良好的晶体界面质量和提高的发光效率。

    Light emitting device using phosphor powder
    4.
    发明申请
    Light emitting device using phosphor powder 有权
    使用荧光粉的发光装置

    公开(公告)号:US20080231172A1

    公开(公告)日:2008-09-25

    申请号:US11808770

    申请日:2007-06-12

    IPC分类号: H01J1/62

    摘要: The present invention is a light emitting device which uses a specific phosphor powder. The phosphor powder is a combination of cerium (Ce) and lithium aluminum oxide (LiAlO2). They are mixed under a specific range of composition ratio. With the specific phosphor powder applied, the light emitting device has advantages in a low cost, a reduced power consumption, an easy production, a long life, and so on. In addition, a transformation efficiency of the phosphor powder is high and so a light emitting efficiency of the light emitting device is enhanced.

    摘要翻译: 本发明是使用特定荧光体粉末的发光装置。 荧光体粉末是铈(Ce)和氧化铝锂(LiAlO 2/2)的组合。 它们在特定的组成比范围内混合。 通过使用特定的荧光体粉末,发光装置具有成本低廉,功耗降低,生产容易,寿命长等优点。 此外,荧光体粉末的转换效率高,因此发光器件的发光效率提高。

    Method of growing GaN using CVD and HVPE
    5.
    发明申请
    Method of growing GaN using CVD and HVPE 有权
    使用CVD和HVPE生长GaN的方法

    公开(公告)号:US20100248461A1

    公开(公告)日:2010-09-30

    申请号:US11808931

    申请日:2007-06-13

    IPC分类号: H01L21/20

    摘要: A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.

    摘要翻译: 通过两个阶段在LiAlO 2衬底上形成厚的氮化镓(GaN)膜。 首先,通过化学气相沉积(CVD)在LiAlO 2衬底上形成GaN纳米棒。 然后通过使用GaN纳米棒作为核部位,通过氢化物气相外延(HVPE)形成厚的GaN膜。 以这种方式,量子限制效应(QCSE)变小,并且在使用LiAlO 2衬底时将锂元素扩散到GaN中的间隙中的问题被修补。

    Light emitting device using phosphor powder
    6.
    发明授权
    Light emitting device using phosphor powder 有权
    使用荧光粉的发光装置

    公开(公告)号:US07868535B2

    公开(公告)日:2011-01-11

    申请号:US11808770

    申请日:2007-06-12

    摘要: The present invention is a light emitting device which uses a specific phosphor powder. The phosphor powder is a combination of cerium (Ce) and lithium aluminum oxide (LiAlO2). They are mixed under a specific range of composition ratio. With the specific phosphor powder applied, the light emitting device has advantages in a low cost, a reduced power consumption, an easy production, a long life, and so on. In addition, a transformation efficiency of the phosphor powder is high and so a light emitting efficiency of the light emitting device is enhanced.

    摘要翻译: 本发明是使用特定荧光体粉末的发光装置。 荧光体粉末是铈(Ce)和氧化铝锂(LiAlO 2)的组合。 它们在特定的组成比范围内混合。 通过使用特定的荧光体粉末,发光装置具有成本低廉,功耗降低,生产容易,寿命长等优点。 此外,荧光体粉末的转换效率高,因此发光器件的发光效率提高。

    Method of growing GaN using CVD and HVPE
    7.
    发明授权
    Method of growing GaN using CVD and HVPE 有权
    使用CVD和HVPE生长GaN的方法

    公开(公告)号:US07863164B2

    公开(公告)日:2011-01-04

    申请号:US11808931

    申请日:2007-06-13

    IPC分类号: H01L21/20 H01L21/36 H01L31/20

    摘要: A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.

    摘要翻译: 通过两个阶段在LiAlO 2衬底上形成厚的氮化镓(GaN)膜。 首先,通过化学气相沉积(CVD)在LiAlO 2衬底上形成GaN纳米棒。 然后通过使用GaN纳米棒作为核部位,通过氢化物气相外延(HVPE)形成厚的GaN膜。 以这种方式,量子限制效应(QCSE)变小,并且在使用LiAlO 2衬底时将锂元素扩散到GaN中的间隙中的问题被修补。

    Structure of LiAlO2 substrate having ZnO buffer layer
    8.
    发明申请
    Structure of LiAlO2 substrate having ZnO buffer layer 有权
    具有ZnO缓冲层的LiAlO 2衬底的结构

    公开(公告)号:US20080233415A1

    公开(公告)日:2008-09-25

    申请号:US11808564

    申请日:2007-06-11

    IPC分类号: B32B15/04

    摘要: A lithium aluminum oxide (LiAlO2) substrate suitable for a zinc oxide (ZnO) buffer layer is found. The ZnO buffer layer is grown on the LiAlO2 substrate. Because the LiAlO2 substrate has a similar structure to that of the ZnO buffer layer, a quantum confined stark effect (QCSE) is effectively eliminated. And a photoelectrical device made with the present invention, like a light emitting diode, a piezoelectric material or a laser diode, thus obtains an enhanced light emitting efficiency.

    摘要翻译: 发现适用于氧化锌(ZnO)缓冲层的氧化锂铝(LiAlO 2 N 2)衬底。 ZnO缓冲层在LiAlO 2衬底上生长。 由于LiAlO 2衬底具有与ZnO缓冲层类似的结构,因此有效地消除了量子限制的Stark效应(QCSE)。 并且,通过本发明制造的光电器件,如发光二极管,压电材料或激光二极管,从而获得增强的发光效率。

    Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof
    10.
    发明授权
    Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof 有权
    通过使用异质衬底制造半导体衬底并在其制造期间再循环异质衬底的方法

    公开(公告)号:US08163651B2

    公开(公告)日:2012-04-24

    申请号:US12210004

    申请日:2008-09-12

    IPC分类号: H01L21/311

    摘要: The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the invention is to prepare the second substrate. Subsequently, the fabricating method is to deposit a buffer layer on the second substrate. Then, the fabricating method is to deposit a semiconductor material layer on the buffer layer. The buffer layer assists the epitaxial growth of the semiconductor material layer, and serves as a lift-off layer. Finally, with an etching solution, the fabricating method is to only etch the lift-off layer to debond the second substrate away from the semiconductor material layer, where the semiconductor material layer serves as the first substrate.

    摘要翻译: 本发明公开了一种制造第一衬底的方法以及在制造第一衬底期间再循环第二衬底的方法。 第二衬底对于第一衬底是不均匀的。 首先,根据本发明的制造方法是制备第二衬底。 随后,制造方法是在第二衬底上沉积缓冲层。 然后,制造方法是将半导体材料层沉积在缓冲层上。 缓冲层有助于半导体材料层的外延生长,并且用作剥离层。 最后,利用蚀刻溶液,制造方法仅仅蚀刻剥离层,使第二衬底脱离半导体材料层,其中半导体材料层用作第一衬底。