发明申请
- 专利标题： Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate
- 专利标题（中）： 使用字线过驱动和高k金属栅极提高磁隧道接头的编程电流
-
申请号： US12687747申请日： 2010-01-14
-
公开(公告)号： US20100254181A1公开(公告)日： 2010-10-07
- 发明人: Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang , Hung-Sen Wang
- 申请人： Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang , Hung-Sen Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/14 ; G11C5/14
摘要：
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
公开/授权文献
信息查询
