发明申请
- 专利标题： Plasma Processing System
- 专利标题（中）： 等离子体处理系统
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申请号： US12511220申请日： 2009-07-29
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公开(公告)号： US20100258246A1公开(公告)日： 2010-10-14
- 发明人: Takehisa Iwakoshi , Masaru Izawa , Akira Kagoshima
- 申请人： Takehisa Iwakoshi , Masaru Izawa , Akira Kagoshima
- 优先权： JPJP2009-096052 20090410
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A plasma processing system includes a processing chamber provided with a plasma generation unit for applying radio-frequency power to supplied processing gas to generate plasma and a stage for holding workpieces, and a control computer for generating plasma in accordance with preset processing conditions to sequentially apply plasma processing to the workpieces and also for sequentially collecting system parameter values each of which represents a state of the plasma processing. The computer is provided with a record unit for storing, in every predetermined period, a frequency that each of the collected system parameter values deviates from a preset reference value, an occurrence rate calculation unit for calculating, based on the frequency, an occurrence rate that the each of the system parameter values deviates from the reference value, and a comparison unit for comparing the occurrence rate with a preset reference value to diagnose a state of the system.
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