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公开(公告)号：US20060043064A1
公开(公告)日：2006-03-02
申请号：US10934383
申请日：2004-09-07
CPC分类号： H01J37/32972 , G01N21/68 , G01N2021/8416 , H01J37/32449 , H01J37/32935
摘要： A plasma processing system includes a process chamber equipped with a gas supply unit, a gas exhaust and an electromagnetic energy supply unit for generating plasma from process gasses, thereby subjecting a specimen placed on a specimen stage to a plasma process. The system includes a spectrometer detecting a spectrum of plasma emission generated in the chamber, flow controllers controlling flow rates of process gasses to be supplied, and a controller controlling the flow controllers. The controller includes a calculation unit for calculating an amount of reaction byproducts generated in the chamber, in accordance with the spectrum of the plasma emission detected with the spectrometer and an input unit for inputting a target timeline of the amount of reaction byproducts, and controls amounts of the process gasses such that a calculation result of the amount of reaction byproducts becomes coincident with the input target timeline.
摘要翻译： 等离子体处理系统包括具有气体供给单元，排气口和用于从工艺气体产生等离子体的电磁能量供给单元的处理室，从而使放置在试样台上的试样进行等离子体处理。 该系统包括检测在室中产生的等离子体发射光谱的光谱仪，控制要供应的过程气体的流量的流量控制器和控制流量控制器的控制器。 控制器包括：计算单元，用于根据用光谱仪检测的等离子体发射光谱和用于输入反应副产物的量的目标时间线的输入单元计算室内产生的反应副产物的量，并控制量 的过程气体，使得反应副产物的量的计算结果与输入的目标时间线一致。
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公开(公告)号：US20100004795A1
公开(公告)日：2010-01-07
申请号：US12199838
申请日：2008-08-28
申请人： Takehisa IWAKOSHI , Go Saito
发明人： Takehisa IWAKOSHI , Go Saito
CPC分类号： H01L21/67248 , H01J37/32935 , H01J37/3299
摘要： The invention provides a plasma processing apparatus capable of setting the temperature of the plasma processing chamber accurately to a specific state, and to perform highly accurate plasma processing while maintaining a constant plasma processing property. The plasma processing apparatus for subjecting a sample w to be processed to plasma processing within a plasma processing chamber 1 comprises a database 25 for correlating and storing the inner temperature of the plasma processing chamber 1 and the plasma generating condition, a model expression storage unit 26 for storing the correlating equation of the inner temperature of the plasma processing chamber 1 and the plasma generating condition from the database 25, and a computing machine 21 having an operation unit 24 for creating the correlation equation and the optimum plasma generating condition, further having a process monitor 31 for monitoring the condition of plasma processing, wherein the value output by the process monitor and the temperature of the plasma processing chamber are correlated and stored in the database 25, and the computing machine 21 computes a plasma processing condition capable of realizing a substantially constant plasma processing chamber temperature, based on which the plasma processing chamber performs plasma processing.
摘要翻译： 本发明提供一种能够将等离子体处理室的温度精确地设定为特定状态的等离子体处理装置，并且在保持恒定的等离子体处理性的同时进行高精度的等离子体处理。 用于使等离子体处理室1内的待处理样品w进行等离子体处理的等离子体处理装置包括用于使等离子体处理室1的内部温度和等离子体生成条件相关和存储的数据库25，模型表达式存储单元26 用于存储等离子体处理室1的内部温度和来自数据库25的等离子体产生条件的相关方程式以及具有用于产生相关方程和最佳等离子体产生条件的操作单元24的计算机21，还具有 处理监视器31，用于监视等离子体处理的状态，其中由过程监视器输出的值和等离子体处理室的温度相关联并存储在数据库25中，并且计算机21计算能够实现 基本恒定的等离子体处理室温度，基于o n等离子体处理室进行等离子体处理。
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公开(公告)号：US20070051470A1
公开(公告)日：2007-03-08
申请号：US11362024
申请日：2006-02-27
CPC分类号： H01J37/32935 , B08B7/0035
摘要： A plasma processing apparatus includes: a processing chamber; a state detector for detecting a state of plasma in the processing chamber; an input unit for inputting process result data of a specimen processed in the plasma processing chamber; and a controller including a prediction equation forming unit for forming a prediction equation of a process result in accordance with plasma state data detected with the state detector for the plasma process simulating a specimen existing state in the processing chamber in a specimen non-placed state and process result data of the specimen input with the input unit and processed by the plasma process in a specimen placed state, and storing the prediction equation, wherein the controller predicts the process result of a succeeding plasma process in accordance with plasma state data newly acquired via the state detector in the specimen non-placed state and the stored prediction equation.
摘要翻译： 一种等离子体处理装置，包括：处理室; 状态检测器，用于检测处理室中的等离子体的状态; 用于输入在所述等离子体处理室中处理的样本的处理结果数据的输入单元; 以及控制器，其包括预测方程式形成单元，用于根据用于等离子体处理的状态检测器检测的等离子体状态数据形成处理结果的预测方程，所述等离子体处理模拟在处理室中的样本未放置状态， 使用输入单元输入的样本的处理结果数据，并且在样本放置状态下通过等离子体处理进行处理，并存储预测方程，其中控制器根据根据新近获取的等离子体状态数据预测后续等离子体处理的处理结果 样品未放置状态下的状态检测器和存储的预测方程。
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公开(公告)号：US20100258246A1
公开(公告)日：2010-10-14
申请号：US12511220
申请日：2009-07-29
申请人： Takehisa Iwakoshi , Masaru Izawa , Akira Kagoshima
发明人： Takehisa Iwakoshi , Masaru Izawa , Akira Kagoshima
IPC分类号： H01L21/3065
CPC分类号： H01J37/3299 , H01J37/32935
摘要： A plasma processing system includes a processing chamber provided with a plasma generation unit for applying radio-frequency power to supplied processing gas to generate plasma and a stage for holding workpieces, and a control computer for generating plasma in accordance with preset processing conditions to sequentially apply plasma processing to the workpieces and also for sequentially collecting system parameter values each of which represents a state of the plasma processing. The computer is provided with a record unit for storing, in every predetermined period, a frequency that each of the collected system parameter values deviates from a preset reference value, an occurrence rate calculation unit for calculating, based on the frequency, an occurrence rate that the each of the system parameter values deviates from the reference value, and a comparison unit for comparing the occurrence rate with a preset reference value to diagnose a state of the system.
摘要翻译： 等离子体处理系统包括：处理室，其具有用于向提供的处理气体施加射频功率以产生等离子体的等离子体产生单元和用于保持工件的载物台;以及用于根据预设的处理条件产生等离子体的控制计算机， 对工件进行等离子体处理，并且还用于顺序收集系统参数值，每个系统参数值表示等离子体处理的状态。 计算机设有记录单元，用于在每个预定时间段内存储每个所收集的系统参数值偏离预设参考值的频率;发生率计算单元，用于基于频率计算出发生率 每个系统参数值偏离参考值，以及比较单元，用于将发生率与预设的参考值进行比较，以诊断系统的状态。
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