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106 条记录 (耗时 0.032 秒)

    Plasma Processing System
    1.
    发明申请
    Plasma Processing System 审中-公开
    等离子体处理系统

    公开(公告)号：US20100258246A1

    公开(公告)日：2010-10-14

    申请号：US12511220

    申请日：2009-07-29

    申请人： Takehisa Iwakoshi ,  Masaru Izawa ,  Akira Kagoshima

    发明人： Takehisa Iwakoshi ,  Masaru Izawa ,  Akira Kagoshima

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/3299 ,  H01J37/32935

    摘要： A plasma processing system includes a processing chamber provided with a plasma generation unit for applying radio-frequency power to supplied processing gas to generate plasma and a stage for holding workpieces, and a control computer for generating plasma in accordance with preset processing conditions to sequentially apply plasma processing to the workpieces and also for sequentially collecting system parameter values each of which represents a state of the plasma processing. The computer is provided with a record unit for storing, in every predetermined period, a frequency that each of the collected system parameter values deviates from a preset reference value, an occurrence rate calculation unit for calculating, based on the frequency, an occurrence rate that the each of the system parameter values deviates from the reference value, and a comparison unit for comparing the occurrence rate with a preset reference value to diagnose a state of the system.

    摘要翻译： 等离子体处理系统包括：处理室，其具有用于向提供的处理气体施加射频功率以产生等离子体的等离子体产生单元和用于保持工件的载物台;以及用于根据预设的处理条件产生等离子体的控制计算机， 对工件进行等离子体处理，并且还用于顺序收集系统参数值，每个系统参数值表示等离子体处理的状态。 计算机设有记录单元，用于在每个预定时间段内存储每个所收集的系统参数值偏离预设参考值的频率;发生率计算单元，用于基于频率计算出发生率 每个系统参数值偏离参考值，以及比较单元，用于将发生率与预设的参考值进行比较，以诊断系统的状态。

    Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination
    6.
    发明申请
    Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开
    具有降低粒子污染的半导体器件制造装置

    公开(公告)号：US20110100555A1

    公开(公告)日：2011-05-05

    申请号：US12987448

    申请日：2011-01-10

    申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    IPC分类号： C23F1/08 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44

    CPC分类号： C23C16/4401 ,  H01J37/32091 ,  H01J37/32678 ,  H01J2237/022

    摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.

    摘要翻译： 半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。 加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为 处理。 温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。

    Method for manufacturing surface treated steel material using a chemical conversion treatment liquid
    7.
    发明授权
    Method for manufacturing surface treated steel material using a chemical conversion treatment liquid 有权
    使用化学转化处理液制造表面处理钢材的方法

    公开(公告)号：US07918945B2

    公开(公告)日：2011-04-05

    申请号：US10771294

    申请日：2004-02-05

    申请人： Masaru Izawa ,  Kunio Goto

    发明人： Masaru Izawa ,  Kunio Goto

    IPC分类号： C23C22/08 ,  C23C22/00

    CPC分类号： C23C22/08 ,  C23C22/00 ,  C23C22/12 ,  C23C22/18 ,  Y10T428/13 ,  Y10T428/264 ,  Y10T428/265

    摘要： A method of manufacturing a surface treated oil well pipe comprising performing chemical conversion treatment on an oil well pipe having a steel composition containing 0.5-13% Cr using a chemical conversion treatment liquid containing zinc and phosphoric acid or manganese and phosphoric acid and further containing potassium tetraborate to form a chemical conversion film of a zinc-phosphate type or a manganese phosphate type, wherein the chemical conversion treatment is carried out in the absence of fluoride ions.

    摘要翻译： 一种表面处理油井管的制造方法，其特征在于，在使用含有锌，磷酸或锰，磷酸的化学转化处理液的含有0.5-13％Cr的钢组成的油井管上进行化学转化处理， 四硼酸盐以形成磷酸锌型或磷酸锰型的化学转化膜，其中化学转化处理在不存在氟离子的情况下进行。

    Plasma processing apparatus
    8.
    发明申请
    Plasma processing apparatus 审中-公开
    等离子体处理装置

    公开(公告)号：US20100006225A1

    公开(公告)日：2010-01-14

    申请号：US12230464

    申请日：2008-08-29

    申请人： Kanetsu Yokogawa ,  Hiroyuki Kobayashi ,  Takumi Tandou ,  Kenji Maeda ,  Masaru Izawa

    发明人： Kanetsu Yokogawa ,  Hiroyuki Kobayashi ,  Takumi Tandou ,  Kenji Maeda ,  Masaru Izawa

    IPC分类号： C23F1/08

    CPC分类号： H01J37/32642 ,  H01J37/32651 ,  H01J37/32935

    摘要： To make it possible to suppress deterioration of processing properties of a sample to be processed due to the distortion of ion sheath at the end portion of the sample to be processed or possible to maintain the condition for suppressing the deterioration, so that the acquisition rate of acceptable products can be increased, so as to thereby improve the yield. In a plasma processing apparatus, a minute hole 10 is provided in a focus ring 9 in the vicinity of the inner circumferential portion thereof. Current detecting means 11 is arranged in the bottom portion of the minute hole 10. A high-frequency power is supplied to the focus ring 9 via high-frequency power distributing means 16. A state of distortion of an ion sheath 18 is detected from an amount of current which is changed according to the amount of the high-frequency power supplied to the focus ring 9 and which is detected by current detecting means 11. Further, the amount of high-frequency power supplied to the focus ring 9 is controlled by a control section 21 so as to correct the detected distortion state.

    摘要翻译： 为了能够抑制由于待处理样品的端部处的离子鞘的变形而导致的待处理样品的加工性能的劣化，或者可以维持抑制劣化的条件，从而使得 可以提高可接受的产品，从而提高产量。 在等离子体处理装置中，微孔10设置在聚焦环9的内周部附近。 电流检测装置11布置在微孔10的底部。高频功率通过高频功率分配装置16提供给聚焦环9​​.离子鞘18的变形状态从 根据提供给对焦环9的高频功率的量而改变并由电流检测装置11检测的电流量。此外，提供给聚焦环9​​的高频功率的量由 控制部分21，以校正检测到的失真状态。

    DIMENSION MEASURING APPARATUS AND DIMENSION MEASURING METHOD FOR SEMICONDUCTOR DEVICE
    10.
    发明申请
    DIMENSION MEASURING APPARATUS AND DIMENSION MEASURING METHOD FOR SEMICONDUCTOR DEVICE 有权
    尺寸测量装置和半导体器件的尺寸测量方法

    公开(公告)号：US20080319709A1

    公开(公告)日：2008-12-25

    申请号：US12128364

    申请日：2008-05-28

    申请人： Masaru KURIHARA ,  Masaru Izawa ,  Junichi Tanaka

    发明人： Masaru KURIHARA ,  Masaru Izawa ,  Junichi Tanaka

    IPC分类号： G01B21/00

    CPC分类号： H01L22/12 ,  H01J2237/2813

    摘要： A dimension of a specific part of a semiconductor device is measured with high accuracy and at a high speed.The invention provides a dimension measuring apparatus used for measuring a dimension of a semiconductor device having a first pattern of repeated structure and a second pattern that is linear and formed on the first pattern to extend over the repeated structure. The dimension measuring apparatus comprises: a shape information acquisition means, which acquires information on a shape of the first pattern; a width value acquisition means, which acquires a width value of each portion of the second pattern on a basis of an observation result of the second pattern by a microscope; an analytic area setting means, which sets a plurality of analytic areas on the second pattern such that the analytic areas are adapted for the first pattern's shape acquired by the shape information acquisition means; and a dimension determining means, which extracts, for each of the set analytic areas, width values of portions included in the analytic area in question out of width values acquired by the width value acquisition means, and uses the extracted width values to determine a dimension of the second pattern at portions overlapping the first pattern.

    摘要翻译： 半导体器件的特定部分的尺寸以高精度和高速度被测量。 本发明提供了一种用于测量具有重复结构的第一图案的半导体器件的尺寸的尺寸测量装置，以及线性形成在第一图案上以在重复结构上延伸的第二图案。 尺寸测量装置包括：形状信息获取装置，其获取关于第一图案的形状的信息; 宽度值获取装置，其基于通过显微镜的第二图案的观察结果获取第二图案的每个部分的宽度值; 分析区域设置装置，其在第二图案上设置多个分析区域，使得分析区域适于由形状信息获取装置获取的第一图案的形状; 以及维度确定装置，其针对每个所设定的分析区域提取由所述宽度值获取装置获取的宽度值中包含在所述分析区域中的部分的宽度值，并且使用所提取的宽度值来确定尺寸 在与第一图案重叠的部分处的第二图案。