发明申请
- 专利标题: STRONTIUM RUTHENIUM OXIDE INTERFACE
- 专利标题(中): 锶氧化铝界面
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申请号: US12421916申请日: 2009-04-10
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公开(公告)号: US20100258903A1公开(公告)日: 2010-10-14
- 发明人: Bhaskar Srinivasan , Vassil Antonov , John Smythe
- 申请人: Bhaskar Srinivasan , Vassil Antonov , John Smythe
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 主分类号: H01L27/10
- IPC分类号: H01L27/10 ; B05D5/12
摘要:
Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
公开/授权文献
- US07939442B2 Strontium ruthenium oxide interface 公开/授权日:2011-05-10