发明申请
- 专利标题： Semiconductor Wafer and Method of Manufacturing the Same and Method of Manufacturing Semiconductor Device
- 专利标题（中）： 半导体晶片及其制造方法及制造半导体器件的方法
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申请号： US12823913申请日： 2010-06-25
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公开(公告)号： US20100258948A1公开(公告)日： 2010-10-14
- 发明人: Naotaka Tanaka , Kenji Kanemitsu , Takafumi Kikuchi , Takashi Akazawa
- 申请人： Naotaka Tanaka , Kenji Kanemitsu , Takafumi Kikuchi , Takashi Akazawa
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 优先权： JPJP2006-265873 20060928
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L21/768 ; H01L21/60
摘要：
A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.