-
1.发明申请公开(公告)号：US20100258948A1
公开(公告)日：2010-10-14
申请号：US12823913
申请日：2010-06-25
IPC分类号： H01L23/538 , H01L21/768 , H01L21/60
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/90 , H01L2224/0554 , H01L2224/05556 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16237 , H01L2224/81141 , H01L2224/81191 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/30107 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
摘要翻译： 一种半导体晶片，包括：在形成晶片的通孔电极的位置处形成的管状沟槽; 绝缘构件，其被埋置在所述沟槽内部和所述沟槽的上表面上; 形成在所述绝缘构件的上表面上的栅电极膜和金属膜; 形成在金属膜的上表面上的多层柱状布线孔; 以及通过多层柱状布线通孔与金属膜电连接形成的外部连接电极。 以这种方式，在薄晶片和设备开发之后，不需要具有干法蚀刻的新工艺来形成通孔电极。 此外，引入特定设计可以形成通孔电极，同时显着降低了各个工艺的难度。
-
2.发明申请Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device 审中-公开半导体晶片及其制造方法以及制造半导体器件的方法公开(公告)号：US20080079152A1
公开(公告)日：2008-04-03
申请号：US11891458
申请日：2007-08-10
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/90 , H01L2224/0554 , H01L2224/05556 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16237 , H01L2224/81141 , H01L2224/81191 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/30107 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
摘要翻译： 一种半导体晶片，包括：在形成晶片的通孔电极的位置处形成的管状沟槽; 绝缘构件，其被埋置在所述沟槽内部和所述沟槽的上表面上; 形成在所述绝缘构件的上表面上的栅电极膜和金属膜; 形成在金属膜的上表面上的多层柱状布线孔; 以及通过多层柱状布线通孔与金属膜电连接形成的外部连接电极。 以这种方式，在薄晶片和设备开发之后，不需要具有干法蚀刻的新工艺来形成通孔电极。 此外，引入特定设计可以形成通孔电极，同时显着降低了各个工艺的难度。
-
3.发明申请Semiconductor Wafer and Method of Manufacturing the Same and Method of Manufacturing Semiconductor Device 审中-公开半导体晶片及其制造方法及制造半导体器件的方法公开(公告)号：US20110133336A1
公开(公告)日：2011-06-09
申请号：US13030098
申请日：2011-02-17
IPC分类号： H01L23/538 , H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/90 , H01L2224/0554 , H01L2224/05556 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16237 , H01L2224/81141 , H01L2224/81191 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/30107 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
摘要翻译： 一种半导体晶片，包括：在形成晶片的通孔电极的位置处形成的管状沟槽; 绝缘构件，其被埋置在所述沟槽内部和所述沟槽的上表面上; 形成在所述绝缘构件的上表面上的栅电极膜和金属膜; 形成在金属膜的上表面上的多层柱状布线孔; 以及通过多层柱状布线通孔与金属膜电连接形成的外部连接电极。 以这种方式，在薄晶片和设备开发之后，不需要具有干法蚀刻的新工艺来形成通孔电极。 此外，引入特定设计可以形成通孔电极，同时显着降低了各个工艺的难度。
-
4.发明授权Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device 有权半导体晶片及其制造方法以及制造半导体器件的方法公开(公告)号：US07897509B2
公开(公告)日：2011-03-01
申请号：US12823913
申请日：2010-06-25
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/90 , H01L2224/0554 , H01L2224/05556 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16237 , H01L2224/81141 , H01L2224/81191 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/30107 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
摘要翻译： 一种半导体晶片，包括：在形成晶片的通孔电极的位置处形成的管状沟槽; 绝缘构件，其被埋置在所述沟槽内部和所述沟槽的上表面上; 形成在所述绝缘构件的上表面上的栅电极膜和金属膜; 形成在金属膜的上表面上的多层柱状布线孔; 以及通过多层柱状布线通孔与金属膜电连接形成的外部连接电极。 以这种方式，在薄晶片和设备开发之后，不需要具有干法蚀刻的新工艺来形成通孔电极。 此外，引入特定设计可以形成通孔电极，同时显着降低了各个工艺的难度。
-
公开(公告)号：US08106518B2
公开(公告)日：2012-01-31
申请号：US12640766
申请日：2009-12-17
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/4763
CPC分类号： H01L25/0657 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/5386 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/81 , H01L24/94 , H01L25/074 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/05557 , H01L2224/0557 , H01L2224/05572 , H01L2224/06181 , H01L2224/1147 , H01L2224/11472 , H01L2224/13009 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13021 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/16058 , H01L2224/16112 , H01L2224/16146 , H01L2224/274 , H01L2224/81136 , H01L2224/81345 , H01L2224/81365 , H01L2224/81801 , H01L2224/81898 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/1205 , H01L2924/1306 , H01L2924/14 , H01L2924/1451 , H01L2924/19041 , H01L2924/30107 , H01L2924/35121 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface-electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode.
摘要翻译： 在层叠多个半导体芯片的半导体装置中，不会降低生产率而提高性能。 半导体器件具有多个元件，层间绝缘膜，焊盘和与依次形成在硅基板的主表面上的焊盘电连接的凸块电极，并且具有形成在硅衬底的背面上的背面电极 硅基板并与凸块电极电连接。 凸块电极具有贯穿焊盘并朝向硅衬底侧突出的突出部分。 背面电极形成为从硅衬底的背面侧朝向主面侧到达突起电极的突出部，并覆盖未到达的背面电极孔部的内部 垫，使得背面电极与凸块电极电连接。
-
公开(公告)号：US20090014843A1
公开(公告)日：2009-01-15
申请号：US12133828
申请日：2008-06-05
IPC分类号： H01L23/52 , H01L21/60 , H01L21/4763
CPC分类号： H01L21/76898 , H01L21/6835 , H01L24/05 , H01L24/90 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/05025 , H01L2224/05553 , H01L2224/0557 , H01L2224/05572 , H01L2224/1134 , H01L2224/13025 , H01L2224/13099 , H01L2224/16147 , H01L2224/16237 , H01L2224/81141 , H01L2224/81191 , H01L2224/90 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/14 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions.
摘要翻译： 形成从半导体衬底的第二表面到达焊盘的通硅。 贯穿硅通孔中的穿透空间由直径小于第一孔直径的第一孔和第二孔形成。 第一孔由半导体衬底的第二表面到层间绝缘膜的中间形成。 此外，形成从第一孔的底部到达垫的第二孔。 然后，形成在半导体衬底的第一表面上的层间绝缘膜具有反映第一孔的底表面和半导体衬底的第一表面之间的台阶差的台阶形状。 更具体地说，第一孔的底表面和垫之间的层间绝缘膜的厚度小于其它部分的厚度。
-
公开(公告)号：US20120091583A1
公开(公告)日：2012-04-19
申请号：US13340165
申请日：2011-12-29
IPC分类号： H01L23/498
CPC分类号： H01L25/0657 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/5386 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/81 , H01L24/94 , H01L25/074 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/05557 , H01L2224/0557 , H01L2224/05572 , H01L2224/06181 , H01L2224/1147 , H01L2224/11472 , H01L2224/13009 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13021 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/16058 , H01L2224/16112 , H01L2224/16146 , H01L2224/274 , H01L2224/81136 , H01L2224/81345 , H01L2224/81365 , H01L2224/81801 , H01L2224/81898 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/1205 , H01L2924/1306 , H01L2924/14 , H01L2924/1451 , H01L2924/19041 , H01L2924/30107 , H01L2924/35121 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode.
摘要翻译： 在层叠多个半导体芯片的半导体装置中，不会降低生产率而提高性能。 半导体器件具有多个元件，层间绝缘膜，焊盘和与依次形成在硅基板的主表面上的焊盘电连接的凸块电极，并且具有形成在硅衬底的背面上的背面电极 硅基板并与凸块电极电连接。 凸块电极具有贯穿焊盘并朝向硅衬底侧突出的突出部分。 背面电极形成为从硅衬底的背面侧朝向主面侧到达突起电极的突出部，并覆盖未到达的背面电极孔部的内侧 垫，使得背面电极与凸块电极电连接。
-
公开(公告)号：US08110900B2
公开(公告)日：2012-02-07
申请号：US12360466
申请日：2009-01-27
IPC分类号： H01L29/40
CPC分类号： H01L24/16 , H01L21/6835 , H01L21/7682 , H01L21/76898 , H01L23/481 , H01L24/83 , H01L24/90 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/0557 , H01L2224/05571 , H01L2224/05572 , H01L2224/1134 , H01L2224/13025 , H01L2224/13099 , H01L2224/16145 , H01L2224/16147 , H01L2224/16225 , H01L2224/16237 , H01L2224/73204 , H01L2224/81141 , H01L2224/81191 , H01L2224/838 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/00012 , H01L2224/05552
摘要： After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate.
摘要翻译： 在形成从其后表面侧穿过半导体衬底的环形沟槽形成并在沟槽内部和半导体衬底的后表面上形成绝缘膜之后，在绝缘膜和半导体衬底上形成通孔 从后表面侧的环形沟槽的内侧，露出在通孔的底部形成在半导体衬底的前表面上的表面保护绝缘膜。 在去除通孔底部的表面保护绝缘膜以形成露出元件表面电极的开口之后，在通孔和开口的内壁上形成连接到元件表面电极的接触电极，并且焊盘电极 由与所述接触电极相同的层形成在所述半导体衬底的后表面上。
-
公开(公告)号：US20110233773A1
公开(公告)日：2011-09-29
申请号：US13153860
申请日：2011-06-06
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L21/6835 , H01L24/05 , H01L24/90 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/05025 , H01L2224/05553 , H01L2224/0557 , H01L2224/05572 , H01L2224/1134 , H01L2224/13025 , H01L2224/13099 , H01L2224/16147 , H01L2224/16237 , H01L2224/81141 , H01L2224/81191 , H01L2224/90 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/14 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions.
摘要翻译： 形成从半导体衬底的第二表面到达焊盘的通硅。 贯穿硅通孔中的穿透空间由直径小于第一孔直径的第一孔和第二孔形成。 第一孔从半导体衬底的第二表面到层间绝缘膜的中间形成。 此外，形成从第一孔的底部到达垫的第二孔。 然后，形成在半导体衬底的第一表面上的层间绝缘膜具有反映第一孔的底表面和半导体衬底的第一表面之间的台阶差的台阶形状。 更具体地说，第一孔的底表面和垫之间的层间绝缘膜的厚度小于其它部分的厚度。
-
公开(公告)号：US20100155940A1
公开(公告)日：2010-06-24
申请号：US12640766
申请日：2009-12-17
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L25/0657 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/5386 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/81 , H01L24/94 , H01L25/074 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/05557 , H01L2224/0557 , H01L2224/05572 , H01L2224/06181 , H01L2224/1147 , H01L2224/11472 , H01L2224/13009 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13021 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/16058 , H01L2224/16112 , H01L2224/16146 , H01L2224/274 , H01L2224/81136 , H01L2224/81345 , H01L2224/81365 , H01L2224/81801 , H01L2224/81898 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/1205 , H01L2924/1306 , H01L2924/14 , H01L2924/1451 , H01L2924/19041 , H01L2924/30107 , H01L2924/35121 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface-electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode.
摘要翻译： 在层叠多个半导体芯片的半导体装置中，不会降低生产率而提高性能。 半导体器件具有多个元件，层间绝缘膜，焊盘和与依次形成在硅基板的主表面上的焊盘电连接的凸块电极，并且具有形成在硅衬底的背面上的背面电极 硅基板并与凸块电极电连接。 凸块电极具有贯穿焊盘并朝向硅衬底侧突出的突出部分。 背面电极形成为从硅衬底的背面侧朝向主面侧到达突起电极的突出部，并覆盖未到达的背面电极孔部的内部 垫，使得背面电极与凸块电极电连接。
-
-
-
-
-
-
-
-
-
搜索结果
70 条记录 (耗时 0.032 秒)
