发明申请
- 专利标题： NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US12747060申请日： 2008-12-02
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公开(公告)号： US20100264393A1公开(公告)日： 2010-10-21
- 发明人: Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
- 申请人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
- 优先权： JP2007-318133 20071210
- 国际申请： PCT/JP2008/003551 WO 20081202
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/02
摘要：
A nonvolatile memory device of the present invention comprises a substrate (1), first wires (3), first filling constituents (5) filled into first through-holes (4), respectively, second wires (11) which cross the first wires (3) perpendicularly to the first wires (3), respectively, each of the second wires (11) including a plurality of layers including a resistance variable layer (6) of each of first resistance variable elements, a conductive layer (7) and a resistance variable layer (8) of each of second resistance variable elements which are stacked together in this order, second filling constituents (14) filled into second through-holes (13), respectively, and third wires (15), and the conductive layer (7) of the second wires (11) serves as the electrodes of the first resistance variable elements (9) and the electrodes of the second resistance variable elements (10).
公开/授权文献
- US08198618B2 Nonvolatile memory device and manufacturing method thereof 公开/授权日：2012-06-12
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