发明申请
- 专利标题: METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE AND MAGNETIC STORAGE DEVICE
- 专利标题(中): 用于制造磁存储器件和磁存储器件的方法
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申请号: US12528854申请日: 2008-02-25
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公开(公告)号: US20100264501A1公开(公告)日: 2010-10-21
- 发明人: Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuta Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
- 申请人: Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuta Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
- 优先权: JP2007-046776 20070227
- 国际申请: PCT/JP2008/053197 WO 20080225
- 主分类号: H01L29/82
- IPC分类号: H01L29/82 ; H01L21/02
摘要:
Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.