公开(公告)号：US20100264501A1

公开(公告)日：2010-10-21

申请号：US12528854

申请日：2008-02-25

申请人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuta Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

发明人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuta Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

公开(公告)号：US08546151B2

公开(公告)日：2013-10-01

申请号：US12528854

申请日：2008-02-25

申请人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

发明人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

公开(公告)号：US07623369B2

公开(公告)日：2009-11-24

申请号：US12030541

申请日：2008-02-13

申请人： Xiao Luo ,  Eugene Chen ,  Lien-Chang Wang ,  Yiming Huai

发明人： Xiao Luo ,  Eugene Chen ,  Lien-Chang Wang ,  Yiming Huai

IPC分类号： G11C16/04

CPC分类号： G11C11/1675 ,  G11C8/12 ,  G11C8/14 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673

摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。 每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。 磁性元件由在第一和第二方向通过磁性元件驱动的第一和第二写入电流编程。 局部字线与第一电阻率的选择装置连接。 每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。 位线与磁性元件连接。 源极线与选择器件连接。 每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

公开(公告)号：US20070246787A1

公开(公告)日：2007-10-25

申请号：US11394056

申请日：2006-03-29

申请人： Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai ,  Zhitao Diao

发明人： Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai ,  Zhitao Diao

IPC分类号： H01L43/00

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/12

摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.

摘要翻译： 与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。 描述了插头MTJ设计和制造技术。

公开(公告)号：US20070171694A1

公开(公告)日：2007-07-26

申请号：US11318337

申请日：2005-12-23

申请人： Yiming Huai ,  Zhitao Diao ,  Alex Panchula ,  Eugene Chen ,  Lien-Chang Wang

发明人： Yiming Huai ,  Zhitao Diao ,  Alex Panchula ,  Eugene Chen ,  Lien-Chang Wang

IPC分类号： G11C11/22

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693

摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.

摘要翻译： 诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

公开(公告)号：US20080310213A1

公开(公告)日：2008-12-18

申请号：US11764057

申请日：2007-06-15

申请人： Eugene Chen ,  Yiming Huai ,  Alexander A.G. Driskill-Smith

发明人： Eugene Chen ,  Yiming Huai ,  Alexander A.G. Driskill-Smith

IPC分类号： G11C11/02 ,  G11C11/40 ,  H01L21/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/7854 ,  Y10S977/935

摘要： A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.

摘要翻译： 描述了包含该单元的磁存储单元和磁存储器。 磁存储单元包括至少一个磁性元件和至少一个非平面选择装置。 磁性元件可通过驱动通过磁性元件的写入电流来编程。 磁存储器可以包括多个磁存储单元，对应于多个磁存储单元的多个位线，以及对应于多个磁存储单元的多个源极线。

公开(公告)号：US20110140217A1

公开(公告)日：2011-06-16

申请号：US12938988

申请日：2010-11-03

申请人： Paul P. Nguyen ,  Yiming Huai ,  Eugene Chen

发明人： Paul P. Nguyen ,  Yiming Huai ,  Eugene Chen

IPC分类号： H01L29/82

CPC分类号： G01R33/1284 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3236 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/302 ,  H01L43/08

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.

公开(公告)号：US20070074317A1

公开(公告)日：2007-03-29

申请号：US11210452

申请日：2005-08-23

申请人： Mahendra Pakala ,  Eugene Chen ,  Yiming Huai

发明人： Mahendra Pakala ,  Eugene Chen ,  Yiming Huai

IPC分类号： H01L29/74

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/10

摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare-earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。 自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，除稀土之外的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。 双层包括稀土 - 过渡金属合金层和自旋电流增强层。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

公开(公告)号：US07742328B2

公开(公告)日：2010-06-22

申请号：US11764057

申请日：2007-06-15

申请人： Eugene Chen ,  Yiming Huai ,  Alexander A. G. Driskill-Smith

发明人： Eugene Chen ,  Yiming Huai ,  Alexander A. G. Driskill-Smith

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/7854 ,  Y10S977/935

摘要： A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.

摘要翻译： 描述了包含该单元的磁存储单元和磁存储器。 磁存储单元包括至少一个磁性元件和至少一个非平面选择装置。 磁性元件可通过驱动通过磁性元件的写入电流来编程。 磁存储器可以包括多个磁存储单元，对应于多个磁存储单元的多个位线，以及对应于多个磁存储单元的多个源极线。

公开(公告)号：US20070097730A1

公开(公告)日：2007-05-03

申请号：US11260778

申请日：2005-10-27

申请人： Eugene Chen ,  Yiming Huai

发明人： Eugene Chen ,  Yiming Huai

IPC分类号： G11C11/00

CPC分类号： G11C11/1653 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes a plurality of magnetic storage cell and at least one bit line and a plurality of source lines corresponding to the plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element that is programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and to a low resistance state by a second write current driven through the magnetic element in a second direction. The bit line(s) and the source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in a third direction that does not destabilize the low resistance state.

摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 磁存储器包括多个磁存储单元和对应于多个磁存储单元的至少一个位线和多个源极线。 每个磁存储单元包括磁性元件，其通过在第一方向上被驱动通过磁性元件的第一写入电流而被编程为高电阻状态，并且通过在第二方向上驱动通过磁性元件的第二写入电流 。 位线和源极线被配置为沿着第一方向驱动通过磁性元件的第一写入电流，以驱动第二写入电流通过第二方向上的磁性元件，并且驱动至少一个读取电流 通过磁性元件在第三方向上不会使低电阻状态不稳定。