发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND A METHOD OF INCREASING A RESISTANCE VALUE OF AN ELECTRIC FUSE
- 专利标题（中）： 半导体器件和增加电熔丝电阻值的方法
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申请号： US12760648申请日： 2010-04-15
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公开(公告)号： US20100264514A1公开(公告)日： 2010-10-21
- 发明人: Takeshi IWAMOTO , Kazushi KONO , Masashi ARAKAWA , Toshiaki YONEZU , Shigeki OBAYASHI
- 申请人： Takeshi IWAMOTO , Kazushi KONO , Masashi ARAKAWA , Toshiaki YONEZU , Shigeki OBAYASHI
- 优先权： JP2006-61512 20060307; JP2006-256226 20060921
- 主分类号： H01L23/525
- IPC分类号： H01L23/525 ; H01L29/86 ; H01H85/02
摘要：
Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.
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