Invention Application
- Patent Title: Pattern forming method
- Patent Title (中): 图案形成方法
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Application No.: US12662402Application Date: 2010-04-15
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Publication No.: US20100266959A1Publication Date: 2010-10-21
- Inventor: Sang-Hee Lee , Jin Choi , Byung-Gook Kim , Hee-Bom Kim
- Applicant: Sang-Hee Lee , Jin Choi , Byung-Gook Kim , Hee-Bom Kim
- Priority: KR10-2009-0033232 20090416
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.
Information query
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