公开(公告)号：US08522172B2

公开(公告)日：2013-08-27

申请号：US13240732

申请日：2011-09-22

Applicant: Young-keun Yoon ,  Hee-bom Kim ,  Myoung-soo Lee ,  Chan-uk Jeon ,  Hak-seung Han

Inventor： Young-keun Yoon ,  Hee-bom Kim ,  Myoung-soo Lee ,  Chan-uk Jeon ,  Hak-seung Han

IPC: G06F17/50

CPC classification number: G03F1/70

Abstract: A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.

Abstract translation: 使用可以将期望图案精确地转印到基板的校准图案形成光掩模的方法。 该方法包括提供一维校准设计图案，每个具有第一设计措施并提供每个具有第二设计措施的二维校准设计图案; 使用一维校准设计图案获得一维校准测量图案，并使用二维校准设计图案获得二维校准测量图案; 获得一维校准测量图案的第一测量度量，并获得二维校准测量图案的第二测量度量; 建立第一测量措施与第二测量措施之间的相关性; 以及使用所述相关性将主模式的主测量度量转换为相应的第一测量度量。

公开(公告)号：US20130143150A1

公开(公告)日：2013-06-06

申请号：US13571043

申请日：2012-08-09

Applicant: JIN CHOI ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

Inventor： JIN CHOI ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

IPC: G03F1/44

CPC classification number: G03F1/44

Abstract: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

Abstract translation: 光掩模的制造方法包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成缺陷检测图案。 缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案，并且在与第一方向不同的第二方向上延伸。 使用由同一放大器衍射的电子束（e-beam）形成第一图案和第二图案。

公开(公告)号：US20120058432A1

公开(公告)日：2012-03-08

申请号：US13219579

申请日：2011-08-26

Applicant: Jin Choi ,  Byung-gook Kim ,  Hee-bom Kim ,  Sang-hee Lee

Inventor： Jin Choi ,  Byung-gook Kim ,  Hee-bom Kim ,  Sang-hee Lee

IPC: G03F7/20

CPC classification number: G03F1/38 ,  G03F1/70 ,  G03F1/76

Abstract: A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.

Abstract translation: 形成半导体器件的方法可以包括基于用于形成掩模的最终图案来确定包括多个镜头的镜头组。 包括在多个镜头中的拍摄可以被分类为处于第一传球镜头或第二镜头组中的每一个，其中每个镜头可以包括多个非直接相邻镜头。 可以执行第一遍曝光以辐射掩模版以提供第一遍照射设置，并且可以执行第二曝光曝光以辐射掩模版以提供第二遍照射设置。

公开(公告)号：US20100266959A1

公开(公告)日：2010-10-21

申请号：US12662402

申请日：2010-04-15

Applicant: Sang-Hee Lee ,  Jin Choi ,  Byung-Gook Kim ,  Hee-Bom Kim

Inventor： Sang-Hee Lee ,  Jin Choi ,  Byung-Gook Kim ,  Hee-Bom Kim

IPC: G03F7/20

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/0451 ,  H01J2237/0458 ,  H01J2237/15 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.

Abstract translation: 图案形成方法包括提供抗蚀剂，将第一电子束照射到抗蚀剂的第一区域，并且将第二电子束照射到沿着抗蚀剂的第一区域的边界限定的第二区域，其中第一电子 梁具有具有多边形形状的第一横截面，并且第二电子束具有具有多边形形状的第二横截面。

公开(公告)号：US20100111427A1

公开(公告)日：2010-05-06

申请号：US12607238

申请日：2009-10-28

Applicant: Hee-Bom Kim ,  Myoung-Soo Lee ,  Young-Su Sung

Inventor： Hee-Bom Kim ,  Myoung-Soo Lee ,  Young-Su Sung

IPC: G06K9/68

CPC classification number: G06T7/0006 ,  G03F1/86 ,  G03F7/70625 ,  G06T2207/30148

Abstract: A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.

Abstract translation: 用于检查光掩模图案的CD（CD）的均匀性的方法提高了产量。 该方法通过使用电子显微镜精确测量光掩模来获得CD。 然后，通过光学显微镜高速拍摄光掩模，获得具有形成在光掩模中的多个图案的测量图像。 当测量图像的开放密度相对较低时，通过仅捕获测量图像中的图案区域来计算基于CD的灰度级，并且获得估计值和相关系数。 因此，对于具有较低开放密度的测量图像的高速测量，可以更清楚地确认CD的均匀性。

公开(公告)号：US20080288912A1

公开(公告)日：2008-11-20

申请号：US12122399

申请日：2008-05-16

Applicant: Hee-Bom KIM ,  Min-Kyu JI ,  Sun-Young CHOI ,  Hyun-Joo BAIK

Inventor： Hee-Bom KIM ,  Min-Kyu JI ,  Sun-Young CHOI ,  Hyun-Joo BAIK

IPC: G06F17/50

CPC classification number: G03F1/84

Abstract: A method of precisely inspecting the entire surface of a mask at a high speed in consideration of optical effects of the mask. The method includes designing a target mask layout for a pattern to be formed on a wafer, and extracting an effective mask layout using an inspection image measured from the target mask layout using an aerial image inspection apparatus as a mask inspection apparatus. The effective mask layout is input to a wafer simulation tool for calculating a wafer image to be formed on the wafer. Optical effects of the mask are detected by comparing the target mask layout with the effective mask layout.

Abstract translation: 考虑到掩模的光学效果，高速地高效地检查掩模的整个表面的方法。 该方法包括设计用于在晶片上形成的图案的目标掩模布局，以及使用使用空间图像检查装置作为掩模检查装置的从目标掩模布局测量的检查图像来提取有效掩模布局。 将有效掩模布局输入到晶片模拟工具，以计算要在晶片上形成的晶片图像。 通过将目标掩模布局与有效掩模布局进行比较来检测掩模的光学效果。

公开(公告)号：US20070224523A1

公开(公告)日：2007-09-27

申请号：US11723472

申请日：2007-03-20

Applicant: Sung-min Huh ,  Hee-bom Kim

Inventor： Sung-min Huh ,  Hee-bom Kim

IPC: B32B9/00 ,  B32B17/06 ,  B32B17/10 ,  G03F1/00 ,  G21K5/00

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/062 ,  G21K2201/061 ,  Y10T428/31616

Abstract: The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.

Abstract translation: 反射光掩模可以包括衬底，形成在衬底上的反射层，形成在反射层上并在衬底的第一部分上方的吸收图案。 补偿部分可以形成在衬底的至少第二部分上。 第二部分与第一部分相邻，并且补偿部分比吸收图案薄。

公开(公告)号：US20120159405A1

公开(公告)日：2012-06-21

申请号：US13240732

申请日：2011-09-22

Applicant: Young-keun YOON ,  Hee-bom Kim ,  Myoung-soo Lee ,  Chan-uk Jeon ,  Hak-seung Han

Inventor： Young-keun YOON ,  Hee-bom Kim ,  Myoung-soo Lee ,  Chan-uk Jeon ,  Hak-seung Han

IPC: G06F17/50

CPC classification number: G03F1/70

Abstract: A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.

Abstract translation: 使用可以将期望图案精确地转印到基板的校准图案形成光掩模的方法。 该方法包括提供一维校准设计图案，每个具有第一设计措施并提供每个具有第二设计措施的二维校准设计图案; 使用一维校准设计图案获得一维校准测量图案，并使用二维校准设计图案获得二维校准测量图案; 获得一维校准测量图案的第一测量度量，并获得二维校准测量图案的第二测量度量; 建立第一测量措施与第二测量措施之间的相关性; 以及使用所述相关性将主模式的主测量度量转换为相应的第一测量度量。

公开(公告)号：US20110244376A1

公开(公告)日：2011-10-06

申请号：US13102836

申请日：2011-05-06

Applicant: Hak-seung HAN ,  Seong-woon Choi ,  Byung-gook Kim ,  Hee-bom Kim ,  Sung-ho Park

Inventor： Hak-seung HAN ,  Seong-woon Choi ,  Byung-gook Kim ,  Hee-bom Kim ,  Sung-ho Park

IPC: G03F1/00 ,  G03B27/42

CPC classification number: G03F1/68 ,  G03F1/36 ,  G03F1/76

Abstract: A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.

Abstract translation: 制造光掩模的方法可以包括在基板上形成遮光层和第一抗蚀剂膜，通过将第一抗蚀剂膜的第一曝光区域暴露于可能具有第一能量的第一曝光源形成第一抗蚀剂图案， 通过使用第一抗蚀剂图案作为蚀刻掩模蚀刻选择性地暴露的遮光层来形成第一遮光图案，去除第一抗蚀剂图案，在第一遮光层上形成第二抗蚀剂膜，暴露第二曝光区域 可以具有期望的图案形状的第二抗蚀剂膜可以具有可以具有第二能量的第二曝光源，通过使用第二抗蚀剂图案作为蚀刻掩模蚀刻选择性地暴露的第一遮光图案来形成第二遮光图案;以及 去除第二抗蚀剂图案。

公开(公告)号：US07745068B2

公开(公告)日：2010-06-29

申请号：US11446980

申请日：2006-06-06

Applicant: Jin-Sik Jung ,  Hee-Bom Kim ,  Woo-Sung Han ,  Sung-Min Huh

Inventor： Jin-Sik Jung ,  Hee-Bom Kim ,  Woo-Sung Han ,  Sung-Min Huh

IPC: G03F1/14

CPC classification number: G03F1/29

Abstract: A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

Abstract translation: 提供了具有改进的分辨率的二进制光掩模及其制造方法。 二元光掩模可以包括基板，形成在基板上以限定电路图案的传输防止图案，以及补偿层，其被配置为基于补偿层的拓扑来改变透射二进制光掩模的光，并布置在透射 - 防止层和/或基板。