发明申请
US20100271690A1 VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE
有权
垂直孔表面发射激光元件，垂直孔表面发射激光阵列元件，垂直孔表面发射激光器件，光源器件和光学模块
- 专利标题： VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE
- 专利标题（中）： 垂直孔表面发射激光元件，垂直孔表面发射激光阵列元件，垂直孔表面发射激光器件，光源器件和光学模块
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申请号： US12726668申请日： 2010-03-18
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公开(公告)号： US20100271690A1公开(公告)日： 2010-10-28
- 发明人: Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
- 申请人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
- 申请人地址： JP Tokyo
- 专利权人： FURUKAWA ELECTRIC CO., LTD.
- 当前专利权人： FURUKAWA ELECTRIC CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-079665 20090327; JP2009-278750 20091208
- 主分类号： H01S3/0941
- IPC分类号： H01S3/0941 ; H01S5/323
摘要：
Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.