Invention Application
- Patent Title: LOW CAPACITANCE PHOTODIODE ELEMENT AND COMPUTED TOMOGRAPHY DETECTOR
- Patent Title (中): 低电容光电元件和计算机图像检测器
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Application No.: US12434947Application Date: 2009-05-04
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Publication No.: US20100276777A1Publication Date: 2010-11-04
- Inventor: Abdelaziz Ikhlef , Wen Li , Jeffrey Alan Kautzer
- Applicant: Abdelaziz Ikhlef , Wen Li , Jeffrey Alan Kautzer
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Main IPC: H01L31/105
- IPC: H01L31/105
Abstract:
A photodiode element includes a first layer of a first diffusion type and a second layer. The second layer defines a charge-collecting area. The charge-collecting area includes an active region of a second diffusion type and an inactive region. The active region surrounds the inactive region. The photodiode element also includes an intrinsic semiconductor layer between the first layer and the second layer.
Public/Granted literature
- US08552466B2 Low capacitance photodiode element and computed tomography detector Public/Granted day:2013-10-08
Information query
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