摘要:
A photodiode element includes a first layer of a first diffusion type and a second layer. The second layer defines a charge-collecting area. The charge-collecting area includes an active region of a second diffusion type and an inactive region. The active region surrounds the inactive region. The photodiode element also includes an intrinsic semiconductor layer between the first layer and the second layer.
摘要:
A photodiode element includes a first layer of a first diffusion type and a second layer. The second layer defines a charge-collecting area. The charge-collecting area includes an active region of a second diffusion type and an inactive region. The active region surrounds the inactive region. The photodiode element also includes an intrinsic semiconductor layer between the first layer and the second layer.
摘要:
A computed tomography (CT) detector array includes a central region substantially symmetric about a central axis thereof and includes a first plurality of x-ray detector cells configured to acquire CT data from a first number of detector rows during a scan, wherein the central axis is in a channel direction of the CT detector array and transverse to a slice direction of the CT detector array. A first wing is coupled to a first side of the central region, and a second wing is coupled to a second side of the central region opposite the first side. The first and second wings include respective second and third pluralities of x-ray detector cells and are each configured to acquire CT data from a number of detector rows that is less than the first number of detector rows. The CT detector array is asymmetric about the central axis of the central region.
摘要:
A computed tomography (CT) detector array includes a central region substantially symmetric about a central axis thereof and includes a first plurality of x-ray detector cells configured to acquire CT data from a first number of detector rows during a scan, wherein the central axis is in a channel direction of the CT detector array and transverse to a slice direction of the CT detector array. A first wing is coupled to a first side of the central region, and a second wing is coupled to a second side of the central region opposite the first side. The first and second wings include respective second and third pluralities of x-ray detector cells and are each configured to acquire CT data from a number of detector rows that is less than the first number of detector rows. The CT detector array is asymmetric about the central axis of the central region.
摘要:
A system, method, and apparatus includes a computed tomography (CT) detector array having a central region with a plurality of central region detecting cells configured to acquire CT data of a first number of slices during a scan, a first wing along a first side of the central region, and a second wing along a second side of the central region opposite the first side. The first wing includes a plurality of first wing detecting cells configured to acquire CT data of a second number of slices during the scan. The second wing includes a plurality of second wing detecting cells configured to acquire CT data of a third number of slices during the scan. The second and third number of slices are less than the first number of slices. The first wing detecting cells are of a different type than the central region detecting cells.
摘要:
A CT system includes a rotatable gantry having an opening to receive an object to be scanned, the rotatable gantry having a detector mounting surface, an x-ray source attached to the gantry and configured to project an x-ray beam toward the object, a plurality of detector modules each mounted within one field-of-view (FOV) and mounted directly to the detector mounting surface of the rotatable gantry, a data acquisition system (DAS) configured to receive outputs from at least one of the plurality of detector modules, and a computer programmed to acquire projections of imaging data of the object from the DAS, and generate an image of the object using the imaging data.
摘要:
A CT system includes a rotatable gantry having an opening to receive an object to be scanned, the rotatable gantry having a detector mounting surface, an x-ray source attached to the gantry and configured to project an x-ray beam toward the object, a plurality of detector modules each mounted within one field-of-view (FOV) and mounted directly to the detector mounting surface of the rotatable gantry, a data acquisition system (DAS) configured to receive outputs from at least one of the plurality of detector modules, and a computer programmed to acquire projections of imaging data of the object from the DAS, and generate an image of the object using the imaging data.
摘要:
Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface. The photodiode array also includes a plurality of refilled conductive vias through the silicon wafer, wherein the refilled conductive vias have a doping type different than the doping type of the substrate, and an interface between the refilled conductive vias and the substrate form diode junctions. The photodiode array further includes a patterned doped layer on the first surface overlapping the refilled conductive vias, wherein the patterned doped layer defines an array of photodiodes.
摘要:
Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface and a plurality of conductive vias through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface, wherein the patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions.
摘要:
Detector modules and methods of manufacturing are provided. One detector module includes a detector having a silicon wafer structure formed from a first layer having a first resistivity and a second layer having a second resistivity, wherein the first resistivity is greater than the second resistivity. The detector further includes a photosensor device provided with the first layer on a first side of the silicon wafer and one or more readout electronics provided with the second layer on a second side of the silicon wafer, with the first side being a different side than the second side.