Invention Application
- Patent Title: METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING A THIN FILM PROBE SHEET FOR USING THE SAME
- Patent Title (中): 制造半导体集成电路装置的方法和制造薄膜探针片的方法
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Application No.: US12836580Application Date: 2010-07-15
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Publication No.: US20100279502A1Publication Date: 2010-11-04
- Inventor: Akio Hasebe , Yasuhiro Motoyama , Yasunori Narizuka , Seigo Nakamura , Kenji Kawakami
- Applicant: Akio Hasebe , Yasuhiro Motoyama , Yasunori Narizuka , Seigo Nakamura , Kenji Kawakami
- Assignee: RENESAS TECHNOLOGY CORP.
- Current Assignee: RENESAS TECHNOLOGY CORP.
- Priority: JP2006-355578 20061228
- Main IPC: H01L21/768
- IPC: H01L21/768

Abstract:
A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.
Public/Granted literature
Information query
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