发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12810667申请日： 2008-12-26
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公开(公告)号： US20100283026A1公开(公告)日： 2010-11-11
- 发明人: Takumi Mikawa , Yoshio Kawashima , Ryoko Miyanaga
- 申请人： Takumi Mikawa , Yoshio Kawashima , Ryoko Miyanaga
- 优先权： JP2007-333768 20071226
- 国际申请： PCT/JP2008/004021 WO 20081226
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L45/00 ; H01L21/70
摘要：
A first wire layer (19) including first memory wires (12) is connected to a second wire layer (20) including second memory wires (17) via first contacts (21) penetrating a first interlayer insulating layer (13). The first wire layer (13) is connected to and led out to upper wires (22) via second contacts (26) connected to the second wire layer (20) and penetrating the second interlayer insulating layer (18). The first contacts (21) penetrate semiconductor layer (17b) or insulator layer (17c) of the second wire layer (20).