发明申请
- 专利标题: Method for Fabrication of a Semiconductor Element and Structure Thereof
- 专利标题(中): 半导体元件的制造方法及其结构
-
申请号: US12782448申请日: 2010-05-18
-
公开(公告)号: US20100289524A1公开(公告)日: 2010-11-18
- 发明人: Zvi Or-Bach , James M. Tour , Jun Yao , Brian Cronquist
- 申请人: Zvi Or-Bach , James M. Tour , Jun Yao , Brian Cronquist
- 申请人地址: US TX Houston
- 专利权人: William Marsh Rice University
- 当前专利权人: William Marsh Rice University
- 当前专利权人地址: US TX Houston
- 主分类号: H03K19/173
- IPC分类号: H03K19/173 ; H01L23/525
摘要:
Re-programmable antifuses and structures utilizing re-programmable antifuses are presented herein. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Additionally, the re-programmable antifuses may be configured to a permanently conductive state by applying an even higher voltage across it.
公开/授权文献
信息查询
IPC分类: