发明申请
- 专利标题： FIELD EFFECT TRANSISTOR FABRICATION FROM CARBON NANOTUBES
- 专利标题（中）： 碳纳米管的场效应晶体管制造
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申请号： US12755188申请日： 2010-04-06
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公开(公告)号： US20100295023A1公开(公告)日： 2010-11-25
- 发明人: Aaron D. Franklin , Timothy D. Sands , Timothy S. Fisher , David B. Janes
- 申请人： Aaron D. Franklin , Timothy D. Sands , Timothy S. Fisher , David B. Janes
- 申请人地址： US IN West Lafayette
- 专利权人： PURDUE RESEARCH FOUNDATION
- 当前专利权人： PURDUE RESEARCH FOUNDATION
- 当前专利权人地址： US IN West Lafayette
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L21/77 ; H01L21/336 ; H01L21/20 ; H01L29/78
摘要：
Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates.
公开/授权文献
- US08872154B2 Field effect transistor fabrication from carbon nanotubes 公开/授权日：2014-10-28
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