发明申请
- 专利标题： Sensitive field effect transistor apparatus
- 专利标题（中）： 敏感场效应晶体管装置
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申请号： US12591466申请日： 2009-11-20
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公开(公告)号： US20100301399A1公开(公告)日： 2010-12-02
- 发明人: Chao-Sung Lai , Cheng-En Lue , Chia-Ming Yang , Szu-Chieh Wang
- 申请人： Chao-Sung Lai , Cheng-En Lue , Chia-Ming Yang , Szu-Chieh Wang
- 申请人地址： TW Kwei-Shan
- 专利权人： Chang Gung University
- 当前专利权人： Chang Gung University
- 当前专利权人地址： TW Kwei-Shan
- 优先权： TW098117383 20090526
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The invention discloses a sensitive field effect transistor apparatus, which uses the inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of sensitive membrane on hydrogen ion is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. The differential amplifier is used to read signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.
公开/授权文献
- US08410530B2 Sensitive field effect transistor apparatus 公开/授权日：2013-04-02
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