发明申请
- 专利标题: NAND FLASH MEMORY WITH INTEGRATED BIT LINE CAPACITANCE
- 专利标题(中): 具有集成位线电容的NAND闪存
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申请号: US12474463申请日: 2009-05-29
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公开(公告)号: US20100302849A1公开(公告)日: 2010-12-02
- 发明人: Chulmin Jung , Harry Hongyue Liu , Brian Lee , Yong Lu , Dadi Setiadi
- 申请人: Chulmin Jung , Harry Hongyue Liu , Brian Lee , Yong Lu , Dadi Setiadi
- 申请人地址: US CA Scotts Valley
- 专利权人: SEAGATE TECHNOLOGY LLC
- 当前专利权人: SEAGATE TECHNOLOGY LLC
- 当前专利权人地址: US CA Scotts Valley
- 主分类号: G11C14/00
- IPC分类号: G11C14/00 ; G11C16/04
摘要:
Method and apparatus for outputting data from a memory array having a plurality of non-volatile memory cells arranged into rows and columns. In accordance with various embodiments, charge is stored in a volatile memory cell connected to the memory array, and the stored charge is subsequently discharged from the volatile memory cell through a selected column. In some embodiments, the volatile memory cell is a dynamic random access memory (DRAM) cell from a row of said cells with each DRAM cell along the row coupled to a respective column in the memory array, and each column of non-volatile memory cells comprises Flash memory cells connected in a NAND configuration.
公开/授权文献
- US08050092B2 NAND flash memory with integrated bit line capacitance 公开/授权日:2011-11-01
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