发明申请
US20100302849A1 NAND FLASH MEMORY WITH INTEGRATED BIT LINE CAPACITANCE 有权
具有集成位线电容的NAND闪存

NAND FLASH MEMORY WITH INTEGRATED BIT LINE CAPACITANCE
摘要:
Method and apparatus for outputting data from a memory array having a plurality of non-volatile memory cells arranged into rows and columns. In accordance with various embodiments, charge is stored in a volatile memory cell connected to the memory array, and the stored charge is subsequently discharged from the volatile memory cell through a selected column. In some embodiments, the volatile memory cell is a dynamic random access memory (DRAM) cell from a row of said cells with each DRAM cell along the row coupled to a respective column in the memory array, and each column of non-volatile memory cells comprises Flash memory cells connected in a NAND configuration.
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