发明申请
- 专利标题： METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE DEDICATED TO SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的半导体衬底的方法和装置以及制造半导体器件的方法和装置
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申请号： US12787750申请日： 2010-05-26
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公开(公告)号： US20100304552A1公开(公告)日： 2010-12-02
- 发明人: Kazunari KURITA
- 申请人： Kazunari KURITA
- 申请人地址： JP Tokyo
- 专利权人： SUMCO CORPORATION
- 当前专利权人： SUMCO CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-133180 20090602; JP2009-136024 20090605; JP2009-136362 20090605
- 主分类号： H01L21/322
- IPC分类号： H01L21/322 ; B23K26/00
摘要：
A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region.
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