摘要:
A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing point (focal point) is positioned at a depth of several tens of gm or so from one surface of the semiconductor wafer. Thereby, the crystal structure of the semiconductor wafer in the position having such a depth is modified, and a gettering sink is formed.
摘要:
Provided is an epitaxial substrate for a back-illuminated image sensor and a manufacturing method thereof that is capable of suppressing metal contaminations and reducing occurrence of a white spot defect of the image sensor, by maintaining a sufficient gettering performance in a device process. The present invention includes forming a gettering sink immediately below a surface of a high-oxygen silicon substrate, forming a first epitaxial layer on the surface of the high-oxygen silicon substrate, and forming a second epitaxial layer on the first epitaxial layer, in which the step of forming the gettering sink includes forming an oxygen precipitate region by applying a long-time heat treatment at a temperature of 650-1150° C. to the high-oxygen silicon substrate.
摘要:
A method of producing an epitaxial substrate for a solid-state imaging device, comprising: forming a gettering sink by injecting laser beam to a semiconductor substrate through one surface thereof, condensing the laser beam to an arbitrarily selected portion of the semiconductor substrate, thereby causing multi-photon absorption process to occur in the portion, and forming a gettering sink having a modified crystal structure; and epitaxially growing at least two epitaxial layers on the semiconductor substrate in which the gettering sink is formed.
摘要:
A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region.
摘要:
This method for manufacturing a high resistivity silicon wafer includes pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 kΩcm, an oxygen concentration Oi of 5.0×1017 to 20×1017 atoms/cm3 (ASTM F-121, 1979), and either one of a nitrogen concentration of 1.0×1013 to 10×1013 atoms/cm3 (ASTM F-121, 1979) and a carbon concentration of 0.5×1016 to 10×1016 atoms/cm3 or 0.5×1016 to 50×1016 atoms/cm3 (ASTM F-123, 1981) by using a Czochralski method, processing the single crystal into wafers by slicing the single crystal, and subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere. A peak position of a resistivity serving as a boundary between a p-type region of a wafer surface side and a p/n conversion region of an inner side of a thickness direction is adjusted by the nitrogen concentration or the carbon concentration such that the peak position is set to a boundary depth in a range of 10 to 70 μm from the wafer surface.
摘要:
There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved.Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017 atoms/cm3 and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018 atoms/cm3.
摘要:
A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing p-type semiconductor material through an insulating layer.
摘要:
A silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more.
摘要翻译:碳浓度为5×10 15〜5×10 17原子/ cm 3的硅晶片,间隙氧浓度为6.5×10 17〜13.5×10 17原子/ cm 3,电阻率为100Ωm以上。
摘要:
A high frequency diode comprising: a P type region, a N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3 interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more.
摘要翻译:一种高频二极管,包括:P型区域,N型区域和插入在P型区域和N型区域之间的作为高电阻率层的I层,其中I层由具有 5×10 15至5×10 17原子/ cm 3的间隙氧浓度的碳浓度为6.5×10 17至13.5×10 17原子/ cm 3,电阻率为100Ωm以上。
摘要:
A method for producing a silicon wafer, comprising performing an activation of metallic impurities by irradiating laser light on the metallic impurities constituting contaminants in the silicon wafer, changing the electric charge of the contaminants, and activating the contaminants to a state such that the contaminants easily react with oxygen precipitation nuclei and are subjected to gettering.