发明申请
- 专利标题： PLASMA PROCESSING APPARATUS
- 专利标题（中）： 等离子体加工设备
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申请号： US12680321申请日： 2008-09-26
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公开(公告)号： US20100307684A1公开(公告)日： 2010-12-09
- 发明人: Ryosaku Ota , Hikaru Adachi , Toshio Nakanishi , Atsushi Ueda , Songyun Kang , Paul Moroz , Peter Ventzek
- 申请人： Ryosaku Ota , Hikaru Adachi , Toshio Nakanishi , Atsushi Ueda , Songyun Kang , Paul Moroz , Peter Ventzek
- 申请人地址： JP Tokyo-to
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo-to
- 优先权： JP2007-254270 20070928; JP2007-254271 20070928
- 国际申请： PCT/JP2008/067513 WO 20080926
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
A microwave plasma processing apparatus (100) of a slot antenna type includes a plane antenna plate (31) constituting a flat waveguide and a cover (34) of a conductive member. The cover (34) is provided with a stub (43) as a second waveguide for adjusting electric field-distribution in the flat waveguide. The stub (43) is provided in the cover (34) of the conductive member. In plan view, the stub (43) is arranged to overlap slots (32) constituting a slot pair arranged at the outermost circumference of the plane antenna plate (31). By appropriately arranging the stub, it is possible to control electric field-distribution in the flat waveguide thereby to generate a uniform plasma.
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