发明申请
- 专利标题： Heterojunction diode, method of manufacturing the same, and electronic device including the heterojunction diode
- 专利标题（中）： 异质结二极管及其制造方法以及包含异质结二极管的电子器件
-
申请号： US12591917申请日： 2009-12-04
-
公开(公告)号： US20100308297A1公开(公告)日： 2010-12-09
- 发明人: Ki-hwan Kim , Young-bae Kim , Seung-ryul Lee , Young-soo Park , Chang-jung Kim , Bo-soo Kang
- 申请人： Ki-hwan Kim , Young-bae Kim , Seung-ryul Lee , Young-soo Park , Chang-jung Kim , Bo-soo Kang
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2009-0049093 20090603
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L45/00 ; H01L21/34 ; H01L29/00
摘要：
Example embodiments relate to a heterojunction diode, a method of manufacturing the heterojunction diode, and an electronic device including the heterojunction diode. The heterojunction diode may include a first conductive type non-oxide layer and a second conductive type oxide layer bonded to the non-oxide layer. The non-oxide layer may be a Si layer. The Si layer may be a p++ Si layer or an n++ Si layer. A difference in work functions of the non-oxide layer and the oxide layer may be about 0.8-1.2 eV. Accordingly, when a forward voltage is applied to the heterojunction diode, rectification may occur. The heterojunction diode may be applied to an electronic device, e.g., a memory device.