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    Heterojunction diode, method of manufacturing the same, and electronic device including the heterojunction diode
    2.
    发明授权
    Heterojunction diode, method of manufacturing the same, and electronic device including the heterojunction diode 有权
    异质结二极管及其制造方法以及包含异质结二极管的电子器件

    公开(公告)号：US08227872B2

    公开(公告)日：2012-07-24

    申请号：US12591917

    申请日：2009-12-04

    申请人： Ki-hwan Kim ,  Young-bae Kim ,  Seung-ryul Lee ,  Young-soo Park ,  Chang-jung Kim ,  Bo-soo Kang

    发明人： Ki-hwan Kim ,  Young-bae Kim ,  Seung-ryul Lee ,  Young-soo Park ,  Chang-jung Kim ,  Bo-soo Kang

    IPC分类号： H01L29/76 ,  H01L29/732

    CPC分类号： H01L27/1021 ,  H01L27/24 ,  H01L29/16 ,  H01L29/22 ,  H01L29/26 ,  H01L29/267 ,  H01L29/861

    摘要： Example embodiments relate to a heterojunction diode, a method of manufacturing the heterojunction diode, and an electronic device including the heterojunction diode. The heterojunction diode may include a first conductive type non-oxide layer and a second conductive type oxide layer bonded to the non-oxide layer. The non-oxide layer may be a Si layer. The Si layer may be a p++ Si layer or an n++ Si layer. A difference in work functions of the non-oxide layer and the oxide layer may be about 0.8-1.2 eV. Accordingly, when a forward voltage is applied to the heterojunction diode, rectification may occur. The heterojunction diode may be applied to an electronic device, e.g., a memory device.

    摘要翻译： 示例实施例涉及异质结二极管，制造异质结二极管的方法，以及包括异质结二极管的电子器件。 异质结二极管可以包括结合到非氧化物层的第一导电型非氧化物层和第二导电型氧化物层。 非氧化物层可以是Si层。 Si层可以是p ++ Si层或n ++ Si层。 非氧化物层和氧化物层的功函数差可以为约0.8-1.2eV。 因此，当向异质结二极管施加正向电压时，可能发生整流。 异质结二极管可以被施加到电子设备，例如存储器件。

    NONVOLATILE MEMORY DEVICES AND METHODS OF DRIVING THE SAME
    8.
    发明申请
    NONVOLATILE MEMORY DEVICES AND METHODS OF DRIVING THE SAME 有权
    非易失性存储器件及其驱动方法

    公开(公告)号：US20130051164A1

    公开(公告)日：2013-02-28

    申请号：US13523429

    申请日：2012-06-14

    申请人： Man Chang ,  Young-bae Kim ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee ,  Chang-jung Kim ,  Myoung-jae Lee ,  Kyung-min Kim

    发明人： Man Chang ,  Young-bae Kim ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee ,  Chang-jung Kim ,  Myoung-jae Lee ,  Kyung-min Kim

    IPC分类号： G11C7/06 ,  G11C7/00

    CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069

    摘要： A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.

    摘要翻译： 一种驱动非易失性存储器件的方法，包括：将复位电压施加到单元存储单元，读取单元存储单元的复位电流，确认复位电流是否在第一电流范围内，如果复位电流不在第一电流范围内 电流范围，如果复位电流在第一电流范围内，则改变复位电压并施加改变的复位电压或再次将施加设定电压的复位电压施加到单元存储单元， 在当前复位电流和紧接在前的设定电流之间的电流在第二电流范围内，并且如果该差值不在第二电流范围内，则在应用组合之后施加复位电压或再次施加复位电压到单元存储单元 电压到单元存储单元。