发明申请
- 专利标题： SILICON CARBIDE SEMICONDUCTOR DEVICE
- 专利标题（中）： 硅碳化硅半导体器件
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申请号： US12846400申请日： 2010-07-29
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公开(公告)号： US20100308343A1公开(公告)日： 2010-12-09
- 发明人: Takuma Suzuki , Hiroshi Kono , Takashi Shinohe
- 申请人： Takuma Suzuki , Hiroshi Kono , Takashi Shinohe
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP2008-022001 20080131
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/24
摘要：
According to the embodiment, a semiconductor device includes an SiC substrate of a first or second conductivity type. An SiC layer of the first conductivity type is formed on a front surface of the substrate, a first SiC region of the second conductivity type is formed on the SiC layer, a second SiC region of the first conductivity type is formed within a surface of the first SiC region, a gate dielectric is continuously formed on the SiC layer, the second SiC region, and the surface of the first SiC region interposed between the SiC layer and the second SiC region, a gate electrode is formed on the gate dielectric, a first electrode is embedded in a trench selectively formed in a part where the first SiC region adjoins the second SiC region, and a second electrode is formed on a back surface of the substrate.
公开/授权文献
- US08431974B2 Silicon carbide semiconductor device 公开/授权日：2013-04-30
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