A semiconductor device is provided and includes a field effect transistor having a gate electrode, a gate insulating layer, a channel forming region composed of an organic semiconductor material layer and a source/drain electrode made of a metal. A portion of the source/drain electrode in contact with the organic semiconductor material layer comprising the channel forming region is covered with an electrode coating material. Because the electrode coating material is composed of organic molecules having a functional group which can be bound to a metal ion and a functional group that binds to the source/drain electrode composed of the metal, low contact resistance and high mobility can be achieved.