发明申请
- 专利标题: Methods Of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
- 专利标题(中): 形成具有包含多个金属氧化物的介电区域的电容器的方法
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申请号: US12483455申请日: 2009-06-12
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公开(公告)号: US20100316793A1公开(公告)日: 2010-12-16
- 发明人: Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jef Hall , Chris Carlson
- 申请人: Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jef Hall , Chris Carlson
- 主分类号: B05D5/12
- IPC分类号: B05D5/12
摘要:
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
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