发明申请
US20100317150A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS
有权
用于金属薄膜CVD / ALD的抗反应和锗复合物
- 专利标题： ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS
- 专利标题（中）： 用于金属薄膜CVD / ALD的抗反应和锗复合物
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申请号： US12860906申请日： 2010-08-22
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公开(公告)号： US20100317150A1公开(公告)日： 2010-12-16
- 发明人: William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
- 申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 主分类号： H01L21/205
- IPC分类号： H01L21/205
摘要：
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.