发明申请
- 专利标题： SUBSTRATE TREATING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
- 专利标题（中）： 基板处理方法及使用其制造半导体器件的方法
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申请号： US12813823申请日： 2010-06-11
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公开(公告)号： US20100317185A1公开(公告)日： 2010-12-16
- 发明人: Rita Vos , Paul Mertens , Tom Schram , Masayuki Wada
- 申请人： Rita Vos , Paul Mertens , Tom Schram , Masayuki Wada
- 优先权： JP2009-140740 20090612
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A substrate treating method comprising a step of preparing a semiconductor substrate (W, 11) which has an oxide film (13, 14) containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film (13, 14) being exposed, and a rinse step of supplying the oxide film (13, 14) on the semiconductor substrate (W, 11) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.
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