发明申请
- 专利标题: Variable Resistance Memory Device and Method of Manufacturing the Same
- 专利标题(中): 可变电阻存储器件及其制造方法
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申请号: US12872876申请日: 2010-08-31
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公开(公告)号: US20100320433A1公开(公告)日: 2010-12-23
- 发明人: Yu-hwan Ro , Byung-gil Choi , Woo-yeong Cho , Hyung-rok Oh
- 申请人: Yu-hwan Ro , Byung-gil Choi , Woo-yeong Cho , Hyung-rok Oh
- 优先权: KR10-2006-0097305 20061002
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L21/02
摘要:
A variable resistance memory device includes a substrate, a plurality of active lines formed on the substrate, are uniformly separated, and extend in a first direction, a plurality of switching devices formed on the active lines and are separated from one another, a plurality of variable resistance devices respectively formed on and connected to the switching devices, a plurality of local bit lines formed on the variable resistance devices, are uniformly separated, extend in a second direction, and are connected to the variable resistance devices, a plurality of local word lines formed on the local bit lines, are uniformly separated, and extend in the first direction, a plurality of global bit lines formed on the local word lines, are uniformly separated, and extend in the second direction, and a plurality of global word lines formed on the global bit lines, are uniformly separated, and extend in the first direction.