发明申请
US20100330738A1 Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same
审中-公开
氧化物半导体靶和使用其的氧化物半导体器件的制造方法
- 专利标题： Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same
- 专利标题（中）： 氧化物半导体靶和使用其的氧化物半导体器件的制造方法
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申请号： US12662305申请日： 2010-04-09
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公开(公告)号： US20100330738A1公开(公告)日： 2010-12-30
- 发明人: Hiroyuki Uchiyama , Hironori Wakana , Tetsufumi Kawamura , Fumi Kurita , Hideko Fukushima
- 申请人： Hiroyuki Uchiyama , Hironori Wakana , Tetsufumi Kawamura , Fumi Kurita , Hideko Fukushima
- 专利权人： HITACHI METALS, LTD.
- 当前专利权人： HITACHI METALS, LTD.
- 优先权： JP2009-096937 20090413
- 主分类号： H01L21/36
- IPC分类号： H01L21/36 ; C23C14/35 ; C23C14/34 ; H01L21/365
摘要：
An oxide semiconductor target of a ZTO (zinc tin complex oxide) type oxide semiconductor material of an appropriate (Zn/(Zn+Sn)) composition having high mobility and threshold potential stability and with less restriction in view of the cost and the resource and with less restriction in view of the process, and an oxide semiconductor device using the same, in which a sintered Zn tin complex oxide with a (Zn/(Zn+Sn)) composition of 0.6 to 0.8 is used as a target, the resistivity of the target itself is at a high resistance of 1 Ωcm or higher and, further, the total concentration of impurities is controlled to 100 ppm or less.
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