- 专利标题： DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM
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申请号： US12879169申请日： 2010-09-10
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公开(公告)号： US20100330813A1公开(公告)日： 2010-12-30
- 发明人: Takashi Nakagawa , Naomu Kitano , Toru Tatsumi
- 申请人： Takashi Nakagawa , Naomu Kitano , Toru Tatsumi
- 申请人地址： JP Kawasaki-shi
- 专利权人： CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA CORPORATION
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2008-282100 20081031
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/314 ; H01L21/336 ; H01L21/8242 ; B05D5/12 ; C23C14/34
摘要：
The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.
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