发明申请
- 专利标题： III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
- 专利标题（中）： III-NITRIDE半导体发光器件
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申请号： US12865721申请日： 2008-09-19
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公开(公告)号： US20110001158A1公开(公告)日： 2011-01-06
- 发明人: Chang Tae Kim , Tae Hee Lee , Gi Yeon Nam
- 申请人： Chang Tae Kim , Tae Hee Lee , Gi Yeon Nam
- 申请人地址： KR Gyungbuk
- 专利权人： EPIVALLEY CO., LTD.
- 当前专利权人： EPIVALLEY CO., LTD.
- 当前专利权人地址： KR Gyungbuk
- 优先权： KR10-2008-0010273 20080131
- 国际申请： PCT/KR08/05531 WO 20080919
- 主分类号： H01L33/32
- IPC分类号： H01L33/32
摘要：
The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.
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