公开(公告)号：US08053793B2

公开(公告)日：2011-11-08

申请号：US12084198

申请日：2006-10-30

申请人： Eun Hyun Park ,  Tae-Kyung Yoo

发明人： Eun Hyun Park ,  Tae-Kyung Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/16 ,  H01L33/32

摘要： The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer. The active layer is disposed over the n-type nitride compound semiconductor layer. The III-nitride compound semiconductor light emitting device includes a masking film made of MgN and grown on the p-type nitride compound semiconductor layer, and at least one nitride compound semiconductor layer grown after the growth of the masking film made of MgN.

摘要翻译： 本发明公开了一种III族氮化物化合物半导体发光器件，其包括通过电子与n型氮化物化合物半导体层和p型氮化物半导体层之间的空穴的复合产生光的有源层。 有源层配置在n型氮化物半导体层的上方。 III族氮化物化合物半导体发光器件包括由MgN制成并在p型氮化物半导体层上生长的掩模膜，以及在由MgN形成的掩模膜生长之后生长的至少一个氮化物半导体层。

公开(公告)号：US20110062487A1

公开(公告)日：2011-03-17

申请号：US12992687

申请日：2008-09-19

申请人： Ji Won Oh

发明人： Ji Won Oh

IPC分类号： H01L33/38

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： The present disclosure relates to a semiconductor light emitting device, the semiconductor light emitting device comprising: a plurality of openings positioned between first electrode and second electrode, the plurality of openings defining a first opening region for suppressing current flow between the first electrode and the second electrode and a second opening region for relatively less suppressing current flow than the first opening region.

摘要翻译： 本发明涉及半导体发光器件，该半导体发光器件包括：位于第一电极和第二电极之间的多个开口，所述多个开口限定第一开口区域，用于抑制第一电极与第二电极之间的电流流动 电极和第二开口区域，用于比第一开口区域相对较少地抑制电流流动。

公开(公告)号：US20090152578A1

公开(公告)日：2009-06-18

申请号：US12195635

申请日：2008-08-21

申请人： Chang Myung Lee

发明人： Chang Myung Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

摘要： The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.

摘要翻译： 本发明涉及通过使用具有粗糙表面的p型氮化物半导体层来提高外部量子效率的III族氮化物半导体发光器件，该p型氮化物半导体层包括：具有第一掺杂的第一氮化物半导体层 浓度，具有比第一掺杂浓度低的第二掺杂浓度和粗糙表面的第二氮化物半导体层以及具有比第二掺杂浓度更高的掺杂浓度的第三氮化物半导体层。

公开(公告)号：US07501664B2

公开(公告)日：2009-03-10

申请号：US10597617

申请日：2005-02-05

申请人： Tae Kyung Yoo ,  Eun Hyun Park

发明人： Tae Kyung Yoo ,  Eun Hyun Park

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14

摘要： The present invention provides a III-nitride compound semiconductor light emitting device comprising an active layer (30) which emits light and is interposed between a lower contact layer (20) made of n-GaN and an upper contact layer (40) made of p-GaN, in which a sequential stack of a lattice mismatch-reducing layer L3 made of InxGa1-xN, an electron supply layer L4 made of n-GaN or n-AlyGa1-yN and a crystal restoration layer L5 made of InzGa1-zN is interposed between the lower contact layer and the active layer, and further comprising an electron acceleration layer L1 made of n-GaN or undoped GaN and a heterojunction electron barrier-removing layer L2, thereby the lattice mismatch between the lower contact layer (20) and the active layer (30) can be reduced.

摘要翻译： 本发明提供了一种III族氮化物化合物半导体发光器件，其包括发射光的有源层（30）并且介于由n-GaN制成的下接触层（20）和由p形成的上接触层（40）之间 其中由In x Ga 1-x N制成的晶格失配减小层L3的顺序堆叠，由n-GaN或n-AllyGa1-yN制成的电子供应层L4和由InzGa1-zN制成的晶体恢复层L5的顺序堆叠是 插入在下接触层和有源层之间，还包括由n-GaN或未掺杂的GaN制成的电子加速层L1和异质结电子势垒去除层L2，从而使下接触层（20）和 可以减少有源层（30）。

公开(公告)号：US07498244B2

公开(公告)日：2009-03-03

申请号：US10543318

申请日：2004-08-21

申请人： Soo Kun Jeon ,  Moon Sik Jang

发明人： Soo Kun Jeon ,  Moon Sik Jang

IPC分类号： H01L21/36

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/36 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a silicon carbide buffer layer on a substrate, a step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0

摘要翻译： 本发明涉及一种制造基于氮化镓（GaN）的氮化物层的方法，包括在衬底上形成碳化硅缓冲层的步骤，形成具有In（x1）Ga（y1）的组成的润湿层的步骤 ）在碳化硅缓冲层上的N（0

公开(公告)号：US20090032835A1

公开(公告)日：2009-02-05

申请号：US12183351

申请日：2008-07-31

申请人： Joong Seo Park

发明人： Joong Seo Park

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02658

摘要： The present disclosure provides a III-nitride semiconductor light emitting device, including: a plurality of III-nitride semiconductor layers including an active layer for generating light by recombination of electrons and holes; and a substrate used to grow the plurality of III-nitride semiconductor layers, and including a protrusion with two opposite sides rounded.

摘要翻译： 本公开内容提供了一种III族氮化物半导体发光器件，包括：多个III族氮化物半导体层，包括通过电子和空穴的复合产生光的有源层; 以及用于生长多个III族氮化物半导体层的衬底，并且包括具有两个相对侧的突起。

公开(公告)号：US20110233603A1

公开(公告)日：2011-09-29

申请号：US13132854

申请日：2009-12-04

申请人： Chang-Tae Kim ,  Gi Yeon Nam

发明人： Chang-Tae Kim ,  Gi Yeon Nam

IPC分类号： H01L33/62

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light-emitting device including: a plurality of semiconductor layers having a first semiconductor layer with a first conductivity, a second semiconductor layer with a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of semiconductor layers; a first electrode spread over the plurality of semiconductor layers; and a second electrode extended from the bonding pad to the first electrode and electrically connecting the bonding pad to the first electrode.

摘要翻译： 本公开涉及一种半导体发光器件，其包括：具有第一导电性的第一半导体层的多个半导体层，具有不同于第一导电性的第二导电性的第二半导体层，以及插入在第一导电层之间的有源层 半导体层和第二半导体层，并且通过电子和空穴的复合产生光; 电连接到所述多个半导体层的接合焊盘; 第一电极，分布在多个半导体层上; 以及从所述接合焊盘延伸到所述第一电极并将所述焊盘电连接到所述第一电极的第二电极。

公开(公告)号：US20110001158A1

公开(公告)日：2011-01-06

申请号：US12865721

申请日：2008-09-19

申请人： Chang Tae Kim ,  Tae Hee Lee ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Tae Hee Lee ,  Gi Yeon Nam

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/22

摘要： The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，包括：具有形成在其上的多个突起的衬底，所述多个突起中的每一个具有三个尖锐部分和三个钝角部分; 以及形成在所述基板上并且包括通过电子和空穴的复合产生光的有源层的多个III族氮化物半导体层。

公开(公告)号：US20100140656A1

公开(公告)日：2010-06-10

申请号：US12647860

申请日：2009-12-28

申请人： Chang Tae Kim ,  Gi Yeon NAM ,  Tae Hee LEE

发明人： Chang Tae Kim ,  Gi Yeon NAM ,  Tae Hee LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light-emitting device generating light by recombination of electrons and holes. The semiconductor light-emitting device includes: a first bonding electrode and a second bonding electrode supplying the current for the recombination of the electrons and holes; a first branch electrode and a second branch electrode extended from the first bonding electrode; and a third branch electrode extended from the second bonding electrode, located between the first branch electrode and the second branch electrode, and having a first interval from the first branch electrode and a second interval smaller than the first interval from the second branch electrode. The second branch electrode is located farther from the center of the light-emitting device than the first branch electrode, and the second branch electrode is located farther from the center of the light-emitting device than the third branch electrode.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件。 半导体发光器件包括：第一接合电极和提供用于电子和空穴的复合的电流的第二接合电极; 从所述第一接合电极延伸的第一分支电极和第二分支电极; 以及第三分支电极，其从所述第二接合电极延伸，位于所述第一分支电极和所述第二分支电极之间，并且具有从所述第一分支电极起的第一间隔，以及距所述第二分支电极小于所述第一间隔的第二间隔。 第二分支电极位于比第一分支电极更远离发光器件的中心，并且第二分支电极位于比第三分支电极更远离发光器件的中心的位置。

公开(公告)号：US07601553B2

公开(公告)日：2009-10-13

申请号：US10563269

申请日：2004-07-16

申请人： Tae-Kyung Yoo ,  Joong-Seo Park ,  Chang-Tae Kim

发明人： Tae-Kyung Yoo ,  Joong-Seo Park ,  Chang-Tae Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/32341 ,  H01S2304/04

摘要： The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semi-conductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon thermal decomposition generates a radical being combined with a hydrogen radical to eliminate the hydrogen radical, thereby eliminates the need for a subsequent annealing process for removing hydrogen and prevents the active layer from being thermally damaged due to the subsequent annealing process.

摘要翻译： 本发明涉及一种氮化物半导体发光器件，其包括多个氮化物半导体层，其具有使用氮前体氨与肼基材料一起形成的p型氮化物半导体，肼基材料在热分解时产生与基团相结合的基团 氢自由基以消除氢根，从而不需要随后的用于除去氢的退火工艺，并防止活性层由于随后的退火工艺而被热损伤。