发明申请
- 专利标题： SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 固态图像传感器及其制造方法
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申请号： US12820655申请日： 2010-06-22
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公开(公告)号： US20110001207A1公开(公告)日： 2011-01-06
- 发明人: Masayuki TAKASE , Hirohisa Ohtsuki , Hiroyuki Doi , Motonari Katsuno
- 申请人： Masayuki TAKASE , Hirohisa Ohtsuki , Hiroyuki Doi , Motonari Katsuno
- 优先权： JP2009-158741 20090703
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L31/18
摘要：
A solid state image sensor includes: a first pixel and a second pixel, each including a light receiving portion; a first color filter formed in an upper part of the first pixel on a first main surface side of a semiconductor substrate; a second color filter formed in an upper part of the second pixel on the first main surface side of the semiconductor substrate; a metal interconnect layer formed on a second main surface side of the semiconductor substrate; and a substrate contact connected to the second main surface of the semiconductor substrate, and provided between the metal interconnect layer and the second main surface. The first color filter mainly transmits first light therethrough, and the second color filter mainly transmits second light therethrough. The second light has a shorter wavelength than that of the first light. The substrate contact is not provided in the first pixel.
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