Invention Application
- Patent Title: MATRIX-TYPE COLD-CATHODE ELECTRON SOURCE DEVICE
- Patent Title (中): MATRIX型冷阴极电子源设备
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Application No.: US12920011Application Date: 2009-02-19
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Publication No.: US20110001421A1Publication Date: 2011-01-06
- Inventor: Makoto Yamamoto , Keisuke Koga
- Applicant: Makoto Yamamoto , Keisuke Koga
- Applicant Address: JP Osaka
- Assignee: PANASONIC CORPORATION
- Current Assignee: PANASONIC CORPORATION
- Current Assignee Address: JP Osaka
- Priority: JP2008-052755 20080304
- International Application: PCT/JP2009/000686 WO 20090219
- Main IPC: H01J1/30
- IPC: H01J1/30 ; H01J1/62

Abstract:
A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.
Public/Granted literature
- US08294351B2 Matrix-type cold-cathode electron source device Public/Granted day:2012-10-23
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